Allicdata Part #: | SIA921EDJ-T4-GE3-ND |
Manufacturer Part#: |
SIA921EDJ-T4-GE3 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.5A SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surf... |
DataSheet: | SIA921EDJ-T4-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17019 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Rds On (Max) @ Id, Vgs: | 59 mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 7.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
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.The SIA921EDJ-T4-GE3 is an integrated N/P-channel transistor array from the SIA921EDJ series created by Siliconix, an American manufacturer of power semiconductors geared towards high- reliability and high-voltage applications. The SIA921EDJ-T4-GE3 integrated circuit is composed of two N-channel and two P-channel MOSFET transistors in one package, making it perfect for use in compact circuits requiring power switching. Its 4 independent channels can each support up to 1000V and 10A of continuous drain current. It is also designed to allow faster switching compared to widely-available power MOSFETs.
The SIA921EDJ-T4-GE3 integrated circuit is designed to function in a power electronic application with two distinct applications. The first application is an H-bridge circuit. An H-bridge circuit is a type of circuit where different transistors can be switched in order to provide power to a load. The SIA921EDJ-T4-GE3 is made up of 4 independent channels, allowing 2 N-channel MOSFETs and 2 P-channel MOSFETs to be switched in order to control the power delivered to a motor or other type of load. This type of configuration is well-suited for speed control applications, especially when the motor tends to have large amounts of inductance. By using the SIA921EDJ-T4-GE3 in an H-bridge configuration, the motor’s speed can be accurately controlled.
The second application is a Buck converter circuit. A Buck converter is a type of power conversion circuit that takes an input of high voltage and current and outputs a lower voltage and current. By using two N-channel and two P-channel MOSFETs, the SIA921EDJ-T4-GE3 can be used to create a basic Buck converter. By controlling the N-channel and P-channel transistors with two different logic signals, the MOTs can be switched to create the desired voltage and current output. The SIA921EDJ-T4-GE3 can be used to create a high-efficiency Buck converter that can handle up to 1000V and 10A of continuous drain current. This wide input voltage range makes the SIA921EDJ-T4-GE3 perfect for applications related to motor control and power management.
The SIA921EDJ-T4-GE3 integrated circuit is a great choice for power switching applications, such as H-bridge and Buck converter circuits. Its 4 channels of independent switches can provide up to 1000V and 10A of continuous drain current. Its high-efficiency design allows it to be switched faster than many available power MOSFETs. It is perfect for compact circuit designs, especially when used in motor speed control and power management applications.
The specific data is subject to PDF, and the above content is for reference
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