| Allicdata Part #: | SIHG14N50D-E3-ND |
| Manufacturer Part#: |
SIHG14N50D-E3 |
| Price: | $ 1.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 14A TO-247AC |
| More Detail: | N-Channel 500V 14A (Tc) 208W (Tc) Through Hole TO-... |
| DataSheet: | SIHG14N50D-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 1.41915 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 208W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1144pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHG14N50D-E3 is an N-Channel insulated-gate bipolar transistor (IGBT) module. It is often used as a switch to control the flow of current in an electronic device. It is characterized by high-frequency operation, low gate charge, high breakdown voltage, low gate-to-drain capacitance, and wide dynamic range. It is ideal for use in applications such as voltage regulators, motor control, power converters, power supplies, and power amplifiers.
The SIHG14N50D-E3 is an N-Channel depletion mode transistor, which means that the current flows when the gate is held low or at 0V. It is composed of multiple transistors with a common emitter and a common gate. By connecting the gate and emitter together, the current is enabled or disabled. It has a wide range of applications due to its high frequency switching capability.
In terms of its working principle, the SIHG14N50D-E3 is a voltage-controlled device, meaning that its operation is dependent on the voltage applied to its gate. When the gate voltage is applied, the transistor begins to conduct current. The amount of current that flows is proportional to the voltage applied to the gate. This is called the device\'s transconductance.
In applications that require high power switching, such as motor control and power converters, the SIHG14N50D-E3 is particularly useful. It can handle large amounts of current with low resistance, can switch high voltages, and has a low gate charge. Additionally, its low turn-on voltage and low gate-drain capacitance make it an ideal choice for high frequency switching applications.
The SIHG14N50D-E3 is also suitable for use in voltage regulation applications. In these applications, the device is used to regulate the output voltage of a power supply. It can be used to control the output voltage over a wide range of input voltages, and can handle large current loads with low resistance.
Overall, the SIHG14N50D-E3 is an ideal choice for applications that require high frequency switching, voltage regulation, or high power switching. Its wide dynamic range and low gate charge make it suitable for a variety of applications, including motor control, power converters, power supplies, and power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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| SIHG25N50E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 500V 26A TO-2... |
| SIHG24N65E-GE3 | Vishay Silic... | -- | 50 | MOSFET N-CH 650V 24A TO24... |
| SIHG22N50D-E3 | Vishay Silic... | -- | 498 | MOSFET N-CH 500V 22A TO-2... |
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| SIHG32N50D-GE3 | Vishay Silic... | -- | 299 | MOSFET N-CH 500V 30A TO-2... |
| SIHG32N50D-E3 | Vishay Silic... | 2.53 $ | 1000 | MOSFET N-CH 500V 30A TO-2... |
| SIHG30N60E-GE3 | Vishay Silic... | -- | 474 | MOSFET N-CH 600V 29A TO24... |
| SIHG21N65EF-GE3 | Vishay Silic... | 4.31 $ | 192 | MOSFET N-CH 650V 21A TO-2... |
| SIHG33N60E-GE3 | Vishay Silic... | -- | 197 | MOSFET N-CH 600V 33A TO-2... |
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SIHG14N50D-E3 Datasheet/PDF