SIHG30N60E-E3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2600pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	125 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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SIHG30N60E-E3 is a new generation of MOSFET developed by Infineon Technologies. The device is designed for applications in a wide range of industries such as automotive, consumer electronics and industrial. Besides, its enhanced properties compared to the standard model with similar technology make SIHG30N60E-E3 a solid choice for high frequency operations and requirements of more demanding applications.In this article, we will take a look at SIHG30N60E-E3’s application field and working principle.Application FieldsSIHG30N60E-E3 is mainly used in the following application fields:Automotive: The automotive industry is one of SIHG30N60E-E3’s primary application fields. The device is used in automotive applications such as electric power steering and airbag systems. It has excellent EMI/RFI protection performance and can withstand the high temperatures and large inrush currents typical in automotive environments.Consumer Electronics: SIHG30N60E-E3 is also widely used in consumer electronic products such as medical instruments, consumer appliances and consumer computers. Due to its highly reliable construction, the device can provide consistent performance in consumer electronics applications.Industrial: In industrial applications, SIHG30N60E-E3 is mainly used in power conversion and control applications. It also provides outstanding protection against overload, overvoltage and transients typical in these systems.Working PrincipleSIHG30N60E-E3 is a Majority Carrier FET (MCFET), which operates on a majority carrier principle. In this type of device, the input voltage is applied across the source and drain electrodes and the gate voltage controls the flow of electrons between the source and drain. When the gate voltage is higher than the threshold voltage, majority carriers, or electrons, are forced to flow from the source to the drain. This creates an inverse current, or current flowing in the opposite direction to that of the applied voltage, resulting in a positive voltage transfer characteristics.In addition, the leakage current of SIHG30N60E-E3 is lower than conventional MOSFETs and it is designed for higher current density applications. This makes the device an ideal solution for power applications with high power density requirements.ConclusionSIHG30N60E-E3 is an advanced MOSFET device from Infineon Technologies. It is primarily used in automotive,consumer electronics and industrial applications. The device uses a majority carrier principle and provides excellent EMI/RFI protection and reliable leakage current performance. Its high power density makes it an ideal solution for high power density requirements.

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