SIHG22N60EL-GE3 Allicdata Electronics
Allicdata Part #:

SIHG22N60EL-GE3-ND

Manufacturer Part#:

SIHG22N60EL-GE3

Price: $ 2.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 21A TO247AC
More Detail: N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-...
DataSheet: SIHG22N60EL-GE3 datasheetSIHG22N60EL-GE3 Datasheet/PDF
Quantity: 1000
500 +: $ 1.98441
Stock 1000Can Ship Immediately
$ 2.21
Specifications
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Series: --
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 197 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The SIHG22N60EL-GE3 is part of the Infineon IGBT (insulated gate bipolar transistor) family. IGBTs are power-transistors with a MOS-like control input, but a bipolar-transistor current-carrying output. Compared to MOSFETs, IGBTs are usually more efficient when used with heavily resistive and/or capacitive loads. They excel in applications from high frequency switching to power converters and motor control.

The SIHG22N60EL-GE3 is specifically designed for automotive applications that require high efficiency and low noise. The device has a maximum drain-source voltage rating of 600 V, a peak current of 60 A, and a maximum junction temperature of 150 °C. The combination of excellent switching performance, low on-state and switching losses, fast tail current turn-off, and high speed capability makes this device an ideal choice for automotive applications.

On the technical side, the SIHG22N60EL-GE3 uses a combination of a MOSFET and bipolar transistor to create a single-chip power suite. The MOSFET’s gate source voltage (Vgs) is responsible for controlling the IGBT’s on/off state, while the bipolar’s collector-emitter voltage (Vce) is responsible for managing the voltage level and providing the current. To ensure excellent switching performance, the SIHG22N60EL-GE3 also has integrated reverse avalanche diodes.

The SIHG22N60EL-GE3 is also designed for low power consumption. This is achieved by using a trench MOSFET technology, which increases the device’s blocking capability and reduces its turn-on and turn-off times. With its Tjmax of 150 °C, low gate charge and low gate-source voltage, the SIHG22N60EL-GE3 is ideal for applications such as power LED drivers, dc-dc converters and motor drives.

To sum up, the SIHG22N60EL-GE3 is a single-chip suite of power components designed for automotive use. It combines a MOSFET and a bipolar transistor to create a low-power, high-efficiency device that is capable of handling resistive and/or capacitive loads. With its integrated reverse avalanche diodes, low power consumption and fast switching times, the SIHG22N60EL-GE3 is an ideal choice for high-frequency switching, power converters and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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