| Allicdata Part #: | SIHG22N60EL-GE3-ND |
| Manufacturer Part#: |
SIHG22N60EL-GE3 |
| Price: | $ 2.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 21A TO247AC |
| More Detail: | N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-... |
| DataSheet: | SIHG22N60EL-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 1.98441 |
| Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 227W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 100V |
| Vgs (Max): | ±30V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 197 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The SIHG22N60EL-GE3 is part of the Infineon IGBT (insulated gate bipolar transistor) family. IGBTs are power-transistors with a MOS-like control input, but a bipolar-transistor current-carrying output. Compared to MOSFETs, IGBTs are usually more efficient when used with heavily resistive and/or capacitive loads. They excel in applications from high frequency switching to power converters and motor control.
The SIHG22N60EL-GE3 is specifically designed for automotive applications that require high efficiency and low noise. The device has a maximum drain-source voltage rating of 600 V, a peak current of 60 A, and a maximum junction temperature of 150 °C. The combination of excellent switching performance, low on-state and switching losses, fast tail current turn-off, and high speed capability makes this device an ideal choice for automotive applications.
On the technical side, the SIHG22N60EL-GE3 uses a combination of a MOSFET and bipolar transistor to create a single-chip power suite. The MOSFET’s gate source voltage (Vgs) is responsible for controlling the IGBT’s on/off state, while the bipolar’s collector-emitter voltage (Vce) is responsible for managing the voltage level and providing the current. To ensure excellent switching performance, the SIHG22N60EL-GE3 also has integrated reverse avalanche diodes.
The SIHG22N60EL-GE3 is also designed for low power consumption. This is achieved by using a trench MOSFET technology, which increases the device’s blocking capability and reduces its turn-on and turn-off times. With its Tjmax of 150 °C, low gate charge and low gate-source voltage, the SIHG22N60EL-GE3 is ideal for applications such as power LED drivers, dc-dc converters and motor drives.
To sum up, the SIHG22N60EL-GE3 is a single-chip suite of power components designed for automotive use. It combines a MOSFET and a bipolar transistor to create a low-power, high-efficiency device that is capable of handling resistive and/or capacitive loads. With its integrated reverse avalanche diodes, low power consumption and fast switching times, the SIHG22N60EL-GE3 is an ideal choice for high-frequency switching, power converters and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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| SIHG24N65E-GE3 | Vishay Silic... | -- | 50 | MOSFET N-CH 650V 24A TO24... |
| SIHG22N50D-E3 | Vishay Silic... | -- | 498 | MOSFET N-CH 500V 22A TO-2... |
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| SIHG32N50D-GE3 | Vishay Silic... | -- | 299 | MOSFET N-CH 500V 30A TO-2... |
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| SIHG30N60E-GE3 | Vishay Silic... | -- | 474 | MOSFET N-CH 600V 29A TO24... |
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| SIHG33N60E-GE3 | Vishay Silic... | -- | 197 | MOSFET N-CH 600V 33A TO-2... |
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SIHG22N60EL-GE3 Datasheet/PDF