SIHG61N65EF-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHG61N65EF-GE3 is a 900V N-Channel Superjunction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) which belongs to the discrete semiconductor components. It is a single power MOSFET transistor which is designed to be used mainly in low-voltage applications, such as in power supplies, lighting controls, and DC-DC converters. The variable characteristics of its drain-source resistance (RDS(on)) and its low gate-source capacitance (CISS), allow it to achieve high efficiency, low noise levels, and fast switching speeds.

General Features

• 900 V N-channel Superjunction MOSFET
• Created with Superjunction Technology
• Low On-Resistance – RDS(on): 0.115mΩ typ.
• Low gate charge – Qg: 13nC typ.
• Low input capacitance – Ci: 747pF typ.
• Low Noise – Rg: 50Ω typ.
• Low threshold voltage – VGS(TH): 2.3V typ.
• Lead-Free with RoHS compliant

Application Fields

The SIHG61N65EF-GE3 is suitable for a variety of power management applications,including but not limited to the following:

• Lighting control, including LED drivers and AC-DC power supplies.
• DC-DC converters, such as buck, boost, and bridge converters.
• Consumer appliances, such as refrigerators and dishwashers.
• Industrial machinery, including power tool and motor control.
• Battery management systems, such as automotive and consumer products.

Due to its low on-resistance and low gate charge, the component is suitable for applications with high frequency switching and power efficiency requirements.

Working Principle

The SIHG61N65EF-GE3 is an N-channel enhancement mode MOSFET that operates on the principle of an insulated gate electric field. This means there is an electric field across the gate oxide, which is then used to modify the conductivity of the channel region between the source and drain. This makes it possible to control the drain-source current and consequently the power transferred through the power MOSFET.

When the device is powered, the gate-source voltage (VGS) must be greater than the threshold voltage, VGS(th) in order to produce a conduction channel between the source and drain. If the threshold voltage is exceeded, a conduction channel will form, allowing current to flow between the source and drain. The drain-source current (ID) is then proportional to the gate-source voltage. Furthermore, the gate-source charge (Qg) is proportional to the gate-source current (Igs) which means the Qg increases with an increase in VGS and current drain.

The SIHG61N65EF-GE3 offers a low on-resistance, making it suitable for applications with high frequency switching and power efficiency requirements. In addition, it has a low gate charge and a low input capacitance. This makes it perfect for applications that require fast switching speeds and low noise levels.

Conclusion

The SIHG61N65EF-GE3 is a 900V N-Channel Superjunction MOSFET which can be used in a variety of power management applications. It is characterized by its low on-resistance, low gate charge, and low input capacitance, making it suitable for applications with high frequency switching and power efficiency requirements. It is also perfect for applications that require fast switching speeds and low noise levels.

The specific data is subject to PDF, and the above content is for reference