SIR106DP-T1-RE3 Allicdata Electronics
Allicdata Part #:

SIR106DP-T1-RE3TR-ND

Manufacturer Part#:

SIR106DP-T1-RE3

Price: $ 0.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 100V POWERPAK SO-8
More Detail: N-Channel 100V 16.1A (Ta), 65.8A (Tc) 3.2W (Ta), 8...
DataSheet: SIR106DP-T1-RE3 datasheetSIR106DP-T1-RE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.62000
10 +: $ 0.60140
100 +: $ 0.58900
1000 +: $ 0.57660
10000 +: $ 0.55800
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR106DP-T1-RE3 is a single, n-channel, enhanced performance MOSFET. It is designed for high density, high power applications. This power MOSFET features an N-channel structure and low on-state resistance. It has been designed to optimize on-state characteristics, providing low on-state resistance, fast switching speed, and low threshold voltage.

In the SIR106DP-T1-RE3, the source is connected to the drain, while the gate is connected to the source. This connection enables the MOSFET to work with a relatively small applied voltage. This can reduce power consumption and is beneficial in high-density applications. The semiconductor is made of silicon, which is a good conductor of electricity. This combined with a small applied voltage gives the semiconductor excellent electrical properties, such as low resistance, fast switching, and low threshold voltage.

The SIR106DP-T1-RE3 is primarily used for power supply applications, switching regulators, battery chargers, and general power switch applications. It is also used in power management, inverters, communication systems, and some other industrial applications. The semiconductor can be operated at temperatures ranging from -55°C to +150°C.

The working principle of the SIR106DP-T1-RE3 is to utilize the increase in the electric field across the gate of the device, to open and close the conduction between the source and the drain. When an electric field is applied across the gate, the barrier between the source and drain is reduced. This reduces the electric resistance between the source and drain, allowing the current to flow between them. When the electric field is removed, the resistance is increased and the current is no longer able to flow. This is the working principle behind the SIR106DP-T1-RE3 MOSFET.

The SIR106DP-T1-RE3 is a high performance single n-channel MOSFET optimized for high density, high power applications. It makes use of an N-channel MOSFET structure and a low on-state resistance for excellent performance. The device is suitable for a variety of applications, including power supply applications, switching regulators, battery chargers, and general power switch applications. The working principle of the SIR106DP-T1-RE3 involves the use of an electric field to open and close the conduction between the source and drain.

The specific data is subject to PDF, and the above content is for reference

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