SIR166DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR166DP-T1-GE3TR-ND

Manufacturer Part#:

SIR166DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 40A PPAK SO-8
More Detail: N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface M...
DataSheet: SIR166DP-T1-GE3 datasheetSIR166DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SIR166DP-T1-GE3 is an application field of transistors and metal-oxide-semiconductor field-effect transistors (MOSFETs). It is categorized as a single MOSFET due to its unit construction. A MOSFET simply functions by modulating electrical current using a metal gate. It works to control the flow of electrons as they pass through. Such gate control has enabled MOSFETs to find various applications in the electrical industry, particularly replacing vacuum tubes and other bipolar transistors.

MOSFETs offer better switching speed and higher current capabilities than traditional bipolar transistors and are also known for their relatively low power consumption. This is why SIR166DP-T1-GE3 is frequently used in high power applications, such as in automotive electronics, where it serves as an efficient power switch. It is mainly used to control a wide range of current levels and to reduce the total power consumption of an electrical device. In addition, with its extremely low on-state resistance, SIR166DP-T1-GE3 helps reduce current losses and consequently enables the efficient transfer of power from the source to the load.

SIR166DP-T1-GE3 has two main parts. The first part is the Gate, which is used to control the electron flow in the MOSFET. The second part is the Source, which serves as the entry point for electrons. The operation of the SIR166DP-T1-GE3 is straightforward; the gate is linked to the external control circuit and the source is connected to the load. When a positive voltage is applied to the gate, a channel is established between the source and the drain and a current can flow through the device. On the other hand, when the voltage is removed, the channel is closed and no current can pass. This allows the SIR166DP-T1-GE3 to act as a switch, allowing for the efficient transfer of power to the load.

The SIR166DP-T1-GE3 is a compact device that is particularly convenient for use in both consumer electronics and automotive applications. With its high power handling capacity, fast switching speed, low power consumption, and low on-state resistance, the SIR166DP-T1-GE3 is an ideal choice for many industries. It is frequently used in the automotive industry, as its performance is perfect for efficient power switching and controlling current levels. In addition, it is capable of handling extremely high power levels, making it suitable for other high-power switching applications, such as electric motors and other power-hungry devices. Furthermore, its low on-state resistance makes it one of the most efficient devices on the market, further decreasing power losses in the transmission process.

In conclusion, the SIR166DP-T1-GE3 is a popular technical application in the electronics industry. It has excellent characteristics in terms of power efficiency, fast switching speed, and high power handling capacity. These features make it ideal for automotive, electric motor, and other high power-consuming applications. As a result, SIR166DP-T1-GE3 is one of the most commonly used MOSFETs and is incredibly popular in the industry.

The specific data is subject to PDF, and the above content is for reference

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