SIR188DP-T1-RE3

Vgs(th) (Max) @ Id:	3.6V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 65.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1920pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	3.85 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	25.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SIR188DP-T1-RE3, a type of discrete transistors, is widely used in the fields of information communication and digital circuit. It can be found in numerous desktop, notebook, and mobile computers, as well as the Internet routers, switches and other network communication devices. This type of transistor is based on the principle of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It works by allowing an electrical current to pass through the p-type semiconductor substrate after being controlled by the gate-source voltage. A MOSFET is a three-terminal device composed of source drain and gate, which are the three terminals on MOSFETs. In most circumstances, the source and drain terminals are the two most visible and distinct terminals, which can be seen mounted into the circuit board and connected to the power supply. The gate terminal, the least visible terminal, is the control terminal that triggers the flow of current through the source to drain circuit.When no electrical voltage is applied, SIR188DP-T1-RE3 acts as an open switch, fully blocking current from passing from the source to the drain. Applying a voltage between the gate and the source causes the current that previously couldn’t flow, to suddenly be allowed to pass through. SIR188DP-T1-RE3 have a wide variety of applications. In the consumer market, SIR188DP-T1-RE3 is often used as a switch in consumer products such as smartphones, audio systems, air conditioners, and household appliances. In the industrial sector, SIR188DP-T1-RE3 can be used in high frequency control circuits and power switch applications. For example, in process control systems, MOSFETS can be used to control the speed of DC motors while preserving the motor’s efficiency and safety. Additionally, they can be used in medical equipments to control the current flow with accuracy and precision.In terms of its benefits, SIR188DP-T1-RE3 offer superior performance relative to a conventional transistor in terms of power saving, switching speed and low-power devices. It features high switching speed and low input capacitance, resulting in lower power consumption. SIR188DP-T1-RE3 also offers an impressive integration level, allowing it to be incorporated into a wide range of devices and applications.Due to its wide variety of applications and benefits, SIR188DP-T1-RE3 is a popular choice among designers and users. Its wide range of applications and benefits make it an attractive and highly efficient transistor for designers and users. SIR188DP-T1-RE3 is a great choice for engineers looking to integrate efficient and reliable transistors into their designs.

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