| Allicdata Part #: | SIR108DP-T1-RE3TR-ND |
| Manufacturer Part#: |
SIR108DP-T1-RE3 |
| Price: | $ 0.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 100V POWERPAK SO-8 |
| More Detail: | N-Channel 100V 12.4A (Ta), 45A (Tc) 5W (Ta), 65.7W... |
| DataSheet: | SIR108DP-T1-RE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.49985 |
| Vgs(th) (Max) @ Id: | 3.6V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5W (Ta), 65.7W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41.5nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12.4A (Ta), 45A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FETs, or field effect transistors, are a type of transistor used to control electrical signals. They are often used in place of BJTs (bipolar junction transistors) because they offer a higher level of control and flexibility. The SIR108DP-T1-RE3 is a type of FET that is primarily used for switching applications. This article will discuss the application fields and working principles of the SIR108DP-T1-RE3.
The SIR108DP-T1-RE3 is a 50V, 0.25A, 300mA low-side DMOS FET. It has a threshold voltage of 1.7V and requires a maximum of 1mA to be operational. The FET is N-channel and is RoHS compliant to help ensure a safe operating environment. Because of its low operating voltage, low on-resistance, and small size, the SIR108DP-T1-RE3 is often used in portable and battery-powered devices. It is also frequently used in low voltage applications such as lighting control systems.
The SIR108DP-T1-RE3 utilizes the MOSFET or Metal-Oxide-Semiconductor FET as its basis of operation. MOSFETs are normally-off devices, meaning that no current flows through them until a gate voltage is applied. The metal gate of the MOSFET acts as a capacitor that is used to control the flow of current between the source and drain terminals. The channel between the source and drain terminals acts like a resistor, providing an appropriate resistance for the amount of current that needs to flow for the application.
The way in which the SIR108DP-T1-RE3 utilizes the MOSFET operation to switch is quite simple. The gate voltage is applied to the gate of the MOSFET which creates an electric field between the gate and the channel. This electric field is what creates the resistance and allows current to flow between the source and drain terminals. When the gate voltage is no longer applied, the electric field is removed and the MOSFET switches back to its normally-off state.
The SIR108DP-T1-RE3 is used in a variety of switching applications, including lighting control systems, motor control systems, and battery powered applications. It is ideal for providing a low-noise, low power, and low-voltage switching solution for these applications. The FET is also RoHS compliant, meaning that it is safe for use in hazardous and extreme environments.
In summary, the SIR108DP-T1-RE3 is a low-side DMOS FET that operates on the basis of the MOSFET. It is used in a variety of switching applications, including battery-powered devices, lighting control systems, and motor control systems. It has a low threshold voltage and low on-resistance, making it ideal for low-power and low-voltage applications. It is also RoHS compliant, ensuring a safe operating environment.
The specific data is subject to PDF, and the above content is for reference
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SIR108DP-T1-RE3 Datasheet/PDF