Allicdata Part #: | SIR164DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR164DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 50A PPAK SO-8 |
More Detail: | N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface... |
DataSheet: | SIR164DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 123nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR164DP-T1-GE3 is an N-Channel enhancement mode field effect transistor. This type of transistor utilizes a MOSFET (metal-oxide-semiconductor field-effect transistor) and is designed to work with a power supply voltage between 8 and 18 volts. In order to understand the physical structure and working principle of the SIR164DP-T1-GE3, it is important to understand the basic structure of a MOSFET as well as the behavior of junction levels within a NMOS/CMOS system.
The SIR164DP-T1-GE3 is a semiconductor device that is composed of three terminal layers; the source, the gate and the drain. The source and the drain are composed of a semiconductor material with a doped N-layer. The Gate is composed of an insulating material between the two layers. When an electric charge is applied to the gate, it creates a conductive channel between the source and the drain. This conductive channel is known as a channel.
The working principle of the SIR164DP-T1-GE3 is based on the threshold voltage or the Vth. This is the voltage difference between the source and the drain when the channel is turned on. The Vth can be varied by changing the gate voltage. When the gate voltage is increased, the threshold voltage is also increased, which can enhance the flow of current between the source and the drain.
The SIR164DP-T1-GE3 can be used in various applications such as DC/DC converters, switching circuits, amplifiers, and analog circuits. In DC/DC converters, the SIR164DP-T1-GE3 can be used as a switch for controlling the power output of the converter. This allows for more precise and efficient control of the power output. In switching circuits and amplifiers, the SIR164DP-T1-GE3 can be used to switch signals upon certain conditions. This allows for precise control over the signal. In analog circuits, the SIR164DP-T1-GE3 can be used as a signal amplifier. The SIR164DP-T1-GE3 can increase the gain of a signal or reduce the noise of a signal, depending on the application.
The SIR164DP-T1-GE3 is a highly efficient device that has numerous applications. By understanding its underlying physical structure and working principle, engineers can use the SIR164DP-T1-GE3 in various types of applications to produce efficient, accurate and reliable results. These applications can range from DC/DC converters to signal amplifiers, and analog circuits.
The specific data is subject to PDF, and the above content is for reference
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