SIR167DP-T1-GE3

The SIR167DP-T1-GE3 is a single enhancement-mode N-channel MOSFET that has been specially developed for high current applications such as DC motors, LED lighting, and battery protection. It is ideal for use in applications requiring low on-state resistance and blocking voltage.

The main features of the MOSFET include a 3.5V gate rating, an R_DS(On) rating of 22mΩ at 10V, and a threshold voltage of -2V. Additionally, it has an improved maximum junction temperature of 175°C and a pulse width maximum of 175µS. The MOSFET is available in the SSOP-8 package, which makes it easy to solder.

Application Field

The SIR167DP-T1-GE3 MOSFET is designed to be used in a wide range of applications where space, power, and efficiency are important. It can be used in DC motor controls, LED lighting, and battery protection. Additionally, it is suitable for high current digital circuits and power supplies.

In DC motor controls, the MOSFET provides quick switching, efficient operation, and minimal heat dissipation, making it especially useful for controlling high-current DC motors. In LED lighting applications, the MOSFET’s low R_DS(On) rating ensures that the LEDs are driven with high efficiency and minimal heat, making the lighting system more robust and reliable.

The MOSFET is also suitable for use in battery protection circuits, as it features a maximum junction temperature rating of 175°C and a high blocking voltage rating. This ensures that the MOSFET can handle the high currents associated with battery protection circuits and also prevents excessive current from flowing through the circuit.

Working Principle

The SIR167DP-T1-GE3 is an enhancement-mode MOSFET, which means that it is normally off. When a positive voltage is applied to the gate terminal, the MOSFET will turn on, allowing current to flow between the source and drain terminals. The amount of current that can flow through the MOSFET is determined by its R_DS(On) rating, which is 22mΩ in this case. The MOSFET is designed to have a low on-state resistance and high blocking voltage, which makes it suitable for a wide range of applications.

The MOSFET can either be used as a switch, opening and closing the circuit, or as a variable resistor, controlling the current through the circuit. When the gate voltage is set to a certain level, the MOSFET can be used as an adjustable resistor, allowing the user to control the current through the circuit. The MOSFET’s threshold voltage, which is -2V in this case, also plays a role in this process.

The SIR167DP-T1-GE3 MOSFET is designed to handle high currents and is rated for a maximum junction temperature of 175°C. This ensures that the MOSFET will not fail because of excessive heat and will remain reliable in high current applications. Additionally, the MOSFET has a pulse width maximum of 175µS, which ensures that is it suitable for pulsed applications.

The SIR167DP-T1-GE3 MOSFET is an excellent choice for applications requiring low on-state resistance and blocking voltage. It is designed to handle high currents and has an improved maximum junction temperature of 175°C. It is available in the SSOP-8 package, which makes it easy to solder. The MOSFET can be used in a wide range of applications including DC motor controls, LED lighting, and battery protection. It can also be used as a switch or a variable resistor, allowing the user to control the current through the circuit.