SIR158DP-T1-GE3

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The SIR158DP-T1-GE3（hereinafter referred to as SIR158DP）is a single-rated field effect transistor (FET) used in various applications including analog circuits, power supplies, and switches. It is a P-channel enhancement mode FET which uses a surfacemount MOSFET to provide improved performance and reliability. SIR158DP 3 has a drain-source voltage of 20V, a drain-source current of 2A, a drain-source on-resistance of 1.3 Ohms and an off-state turn-on voltage of 4V.

The SIR158DP has enhanced efficiency, owing to its power and efficiency in switching applications. This is due to the MOSFET’s high channel-surge current, its low RDS(on) and its low gate-source capacitance. It can handle input and output voltage transients, allowing it to deal with any sudden surge in voltage, which makes it ideal for high-power applications. This also greatly reduces risks of damage or disruption to circuits, while still providing efficient operation.

The main working principle of the SIR158DP is based on the charge carrier injection principle. When the gate-source voltage Vgs is larger than the threshold voltage Vth, the current between the Drain and the Source will increase. When the gate-source voltage is smaller than the threshold voltage, the current between Drain and Source will decrease. The SIR158DP uses this property to control the current flow between drain and source, thus making it suitable for a variety of switching applications. The threshold voltage of the SIR158DP is 4 volts, which makes it ideal for devices that require low power to operate.

The SIR158DP’s maximum drain-source voltage (VDS) is 20 V. This makes it suitable for a variety of applications that require a higher operating voltage than conventional FETs, such as power supplies and switching applications. The drain current previously mentioned (2A) is capable of providing very high current, which is ideal for a wide range of applications. The low gate-source capacitance of the SIR158DP also makes it well-suited to high-speed switching applications where the propagation delay is critical.

In addition to its excellent electrical properties, the SIR158DP also has low noise and EMI issues and very low thermal resistance, making it suitable for high-speed operations. The device is also RoHS compliant and recognized for safer working conditions. Finally, the SIR158DP is available in both through-hole (SOT-23A) and surface-mount (SOT-23A) packages, allowing it to be used in various circuits.

The SIR158DP is versatile enough to be used in a variety of applications, making it an ideal choice for both new and existing designs. It is especially suited to power supplies or switching applications that require higher current capabilities and stability than conventional FETs. With its low threshold voltage, low gate-source capacitance, low RDS(on) and high switching speeds, the SIR158DP-T1-GE3 is a reliable and efficient choice for many applications.

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