SIR158DP-T1-RE3

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The SIR158DP-T1-RE3 is a single P-Channel MOSFET transistor from the Vishay Siliconix Semiconductor series. It is specifically designed for lightweight and fast electrical response applications. Due to its high level of integration and light weight it is particularly suited for use in mobile and wireless applications.

The SIR158DP-T1-RE3 is an evolutionary semiconductor solution developed as an alternative to traditional FETs and MOSFETs. The SIR158DP-T1-RE3 is based on the latest generation of enhancement mode MOSFET technology to deliver ultra-low gate charge and superior overall performance. Its P-channel construction results in a much higher on-resistance than with bipolar and other FETs, increasing the device’s ability to handle higher current loads and less switching losses.

The SIR158DP-T1-RE3 feature a fast switching speed and a shallow junction depth, allowing for low gate resistance and low on-resistance whenever greater current handling or faster switching rates are needed. Its on-resistance is very low, measuring at about 9.65 Ω at 4.5V. Additionally, the SIR158DP-T1-RE3 offers a low drain-source on-resistance (RDS(on)) of 9.6 mOhms max at 10V and 0°C. At 4.5V the device has an on-resistance of 10.2 mOhms max.

The SIR158DP-T1-RE3’s low output capacitance also helps to improve its overall performance. This feature allows the transistor to switch more efficiently, thus reducing power dissipation and increasing energy savings. The SIR158DP-T1-RE3 also features a very low gate threshold voltage of -3V, giving the device enhanced low voltage operation capability. Its gate threshold voltage also helps to reduce switching losses in application and further improves the device’s overall performance.

Due to the SIR158DP-T1-RE3’s fast switching capabilities, it is well-suited for use in a wide range of application fields. It is particularly useful for applications involving medium volume switching, especially in the fields of power management, motor control systems, communications, personal PCs, office automation, and personal electronics. There are many other applications for which the SIR158DP-T1-RE3 could be used, such as power switching, interface switching, and protection circuits.

The SIR158DP-T1-RE3’s working principle is based on that of a standard MOSFET. It consists of three terminals, the source, the drain, and the gate. The source serves as the entry point for the current while the drain serves as the exit point. The gate is an insulated terminal that controls the flow of current between the source and the drain. When a voltage is applied to the gate, it causes electrons to flow from source to drain, thus creating an electrical current.

To turn off the flow of current, the voltage that is applied to the gate must be reversed. This reverse voltage will cause the electrons to return to the source, thus stopping the current flow. Due to its very low gate threshold voltage, the SIR158DP-T1-RE3 has very fast switching capabilities. This means that the switch can be turned off or on very quickly, allowing for efficient power control in applications where response time is important.

In summary, the SIR158DP-T1-RE3 is a high performance single P-Channel MOSFET transistor offering fast switching speed, low input and output capacitance, high level of integration, and low gate threshold voltage. With these characteristics, the SIR158DP-T1-RE3 is an ideal solution for applications involving medium volume switching, power management, motor control systems, and power switching applications where response time is critical. With its fast switching capabilities, low output capacitance and excellent ESD protection, the SIR158DP-T1-RE3 provides improved electrical performance in a wide range of applications.

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