SIR164DP-T1-RE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIR164DP-T1-RE3 is a type of Field-Effect Transistor (FET), more specifically, a Metal-Oxide Semiconductor field-effect transistor (MOSFET). It is a single transistor, requiring only one component for operation. As such, it is very convenient component to use, which makes it very popular among designers and engineers for their applications.

FETs operate on the principle of charge carriers, namely electrons and holes, between two conducting channels or electrodes. The SIR164DP-T1-RE3 consists of a p-type semiconductor substrate, an n-type source, and an n-type drain. When a voltage is applied across the source and drain, the majority carriers (electrons, in this case) in the p-type substrate will move to the higher voltage side (drain), while a minority of carriers (holes) will move to the source, creating an electric field across the transistor. This electric field will modify the characteristics of the transistor, resulting in the desired output.

The SIR164DP-T1-RE3 is a wonderful component due its large signal-handling capability, even in small packages, and its high input impedance, making it ideal for applications requiring larger currents. It also has a relatively low-voltage turn-on threshold and a large surge rating, making it suitable for use in a variety of high-powered applications, such as power switching, motor control and high-voltage conversion.

The most common applications of the SIR164DP-T1-RE3 are in high-speed switching, converters, and voltage boosting applications. It is well-suited for power amplifiers, relay drivers, and other high-power devices. It can also be used as a switch for low-level signal processing in audio, video and other digital signals. Its low resistive gate drive makes it suitable for high frequency RF switching applications as well.

The physical design of the SIR164DP-T1-RE3 makes it withstand very high voltage and current ratings, and it is able to work in temperatures ranging from -40°C to 85°C. It is also highly reliable, making it a great choice for various engineering applications and is an affordable option as well. To ensure it performs as expected, it also requires some heat dissipation depending on the current drawn.

In summary, the SIR164DP-T1-RE3 is a highly versatile and reliable transistor that is ideal for numerous applications. Its large signal-handling capability, high input impedance, low-voltage turn-on threshold, and power rating make it the ideal component for high-powered electronic devices, audio and video signals, and high-frequency RF switching applications. Further, its low cost, small package size, and wide range of operating temperatures make it an incredibly attractive component for engineers.

The specific data is subject to PDF, and the above content is for reference