SIR165DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR165DP-T1-GE3TR-ND

Manufacturer Part#:

SIR165DP-T1-GE3

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CHAN 30V POWERPAK SO-8
More Detail: P-Channel 30V 60A (Tc) 69.4W (Tc) Surface Mount Po...
DataSheet: SIR165DP-T1-GE3 datasheetSIR165DP-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.47926
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Series: TrenchFET® Gen III
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SIR165DP-T1-GE3 is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)and has many applications. MOSFETs are used in integrated circuits, which are the main components in nearly every electronically driven device. The SIR165DP-T1-GE3 is primarily used in power management and automotive applications, however, they can also be found in communications systems and home electronics.

The SIR165DP-T1-GE3 is a type of enhancement mode MOSFET with a single gate and two source-drain terminals, making it an ideal choice for many applications. Its benefits include a low on-state resistance, ensuring efficient operation and low power dissipation. Additionally, it features a high current carrying capability and built-in Miller compensation for improved device stability. The SIR165DP-T1-GE3 has a maximum drain-source voltage of 20V and a maximum DC drain current of 165A, making it suitable for a variety of power management tasks.

The working principle of the SIR165DP-T1-GE3 follows the same principle as most transistors, meaning that it functions as an amplifier for incoming signals. This means that the MOSFET is responsible for controlling the current between its two source terminals. A voltage is applied to the gate terminal, and depending on which type of MOSFET is being used, that charge will either be increased or decreased. This basic principle is used in integrated circuits to control the electrical current without the need for a physical switch.

The SIR165DP-T1-GE3 is mostly suited for switching applications in power management and automotive applications. It is popularly used in power supplies, such as those used in cell phones and laptops, as well as in power converters. Additionally, they are used in applications such as motor control and lighting. The SIR165DP-T1-GE3\'s ability to efficiently handle high current loads makes it ideal for these applications.

In conclusion, the SIR165DP-T1-GE3 is General Electric\'s single-gate MOSFET transistor, designed for efficient power management and automotive applications. Its low on-state resistance and high current-carrying capacity makes it an ideal choice for many power management needs. Its working principle is identical to that of other transistors, meaning that it serves as an amplifier for incoming signals, allowing for more precise regulation of electrical currents in robust designs. The SIR165DP-T1-GE3 is a highly versatile power management option, and is likely to remain a popular choice in the years to come.

The specific data is subject to PDF, and the above content is for reference

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