SIR140DP-T1-RE3 Discrete Semiconductor Products

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The SIR140DP-T1-RE3 is a high-performance power semiconductor system designed to provide excellent handling of high currents and low risk of failure. It is used in a wide range of applications, from power converters, AC drive systems, power supplies and inverters, to energy storage and automation systems. The SIR140DP-T1-RE3 is designed as a Field-Effect Transistor (FET) with a single source drain region, a body region and a parasitic capacitance. The single channel is used to reduce the heat generated by high-power applications.

The SIR140DP-T1-RE3 is a n-channel enhancement-mode power MOSFET that is made up of a monolithic structure with a gate oxide layer and gate-drain and source-drain regions. This structure uses the majority carriers of electron and hole flow for controllable conduction of current. It has a high,efficient voltage gain and a low operating temperature. It is an excellent choice for a wide range of power applications including high powered motors, renewable energy systems, automotive applications and industrial systems.

The source-drain voltage of the SIR140DP-T1-RE3 is controlled by a metal-oxide semiconductor (MOS) gate structure, wherein the metal gate is connected to the drain, the source and the body. The metal gate carries a voltage which is responsible for controlling the electrical field between the source and the drain of the device. This voltage can be operated between 0 and 20V to provide a controllable current limitation. The SIR140DP-T1-RE3 has a maximum drain-source voltage, a maximum drain current and an on-state resistance all based on the packaging technology used in manufacturing. The maximum drain current is usually rated at 6A.

The working principle of the SIR140DP-T1-RE3 is based on the use of electron and hole pairs called carriers. At low gate voltages, the device is in a cut-off state and very little current is allowed to flow through the device in this state. But at a certain gate voltage the carriers are attracted to the gate and move towards the drain and source. This movement of carriers creates a conductive channel between the gate and the drain which then allows a current to flow through the channel.

The current flowing through the SIR140DP-T1-RE3 also depends on the gate voltage. The higher the gate voltage, the higher the current that will be allowed to flow through the device. The gate voltage is also responsible for controlling the on and off state of the device; when the gate voltage is at 0V, the device is off, but when the gate voltage is increased to a certain voltage, the device is turned on.

The SIR140DP-T1-RE3 is used in applications where power efficiency, high drain current and low gate voltage are required. It provides a low-power, cost-effect solution for power management and automation applications. Some of the applications where the SIR140DP-T1-RE3 can be used include AC/DC power converters, inverters, industrial lighting, robotics, renewable energy systems, power supplies and automotive systems.

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