
Allicdata Part #: | SISS02DN-T1-GE3TR-ND |
Manufacturer Part#: |
SISS02DN-T1-GE3 |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 25V POWERPAK 1212- |
More Detail: | N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.49000 |
10 +: | $ 0.47530 |
100 +: | $ 0.46550 |
1000 +: | $ 0.45570 |
10000 +: | $ 0.44100 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | PowerPAK® 1212-8S |
Supplier Device Package: | PowerPAK® 1212-8S |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 65.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4450pF @ 10V |
Vgs (Max): | +16V, -12V |
Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SISS02DN-T1-GE3 Application Field and Working Principle
SISS02DN-T1-GE3 is a single-wire logic-level field effect transistor (FET) switch. It is a part of the family of switches SISS02DN-T1, from Company of Automation (C0A).
The switch can be used to control the flow of current through a variety of systems, such as computers, automotive systems, robotics, factory automation, and other industrial and commercial applications. This type of switch is especially useful in low-power applications, where it can save energy and reduce the size of the system. It can also be used to control current in power-sensitive applications, as it has low on-resistance and high switching speed.
The SISS02DN-T1-GE3 switch is a logic-level FET switch, meaning it does not require a large amount of power to operate. The input signal to turn the switch on or off is a logic signal, meaning it can accept low-voltage levels from a digital input source, such as a computer or a remote control. The FET switch is also very fast, responding to input signals in less than a microsecond.
The switch is composed of a silicon-based field effect transistor (FET) and a gate. The FET is a voltage-controlled device that can be used to control the flow of current through a circuit by varying the voltage applied to the gate. When the gate voltage is greater than a certain threshold, the FET conducts electricity and the current flow is controlled. The threshold voltage of the SISS02DN-T1-GE3 switch is usually around 1.1 Volts.
The switch works by using the gate voltage to control the current flow through the FET. When the gate voltage is high enough to make the FET conduct electricity (at the threshold voltage), the current will flow through the device and the switch will be “on”. When the gate voltage is below the threshold voltage, the FET will not allow current to flow through the device, and the switch will be “off”.
The SISS02DN-T1-GE3 switch is very useful in low-power applications, as it can provide a fast and efficient way to control current flow through a system. The switch is also reliable, requiring little maintenance and providing long service life. As a result, it is widely used in a variety of systems and devices, ranging from computers and robotics to automobiles and factory automation.
The specific data is subject to PDF, and the above content is for reference
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