| Allicdata Part #: | SISS10DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SISS10DN-T1-GE3 |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 60A PPAK 1212-8S |
| More Detail: | N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount Powe... |
| DataSheet: |  SISS10DN-T1-GE3 Datasheet/PDF |
| Quantity: | 12000 |
| 1 +: | $ 0.26400 |
| 10 +: | $ 0.25608 |
| 100 +: | $ 0.25080 |
| 1000 +: | $ 0.24552 |
| 10000 +: | $ 0.23760 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerPAK® 1212-8S (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 57W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 20V |
| Vgs (Max): | +20V, -16V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.65 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SISS10DN-T1-GE3 is a two-terminal device with a single input and a single output. It is an insulated-gate field-effect transistor (IGFET) in which an insulated-gate electrode is used to control the conductivity of a channel between source and drain. It is commonly referred to as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
The SISS10DN-T1-GE3 uses an input voltage to control the current flow between source and drain. It is often used as an electrical switch by using a small voltage change to control a larger current. The SISS10DN-T1-GE3 can also be used as an amplifier by controlling the resistance of the channel between the source and drain.
The SISS10DN-T1-GE3 MOSFET is a type of field-effect transistor (FET) that is composed of a p-type region formed between two n-type regions. The gate terminal between these regions acts as a switching element. When a voltage is applied to the gate terminal, a region of depletion is formed around the gate which in turn controls the current flow between the source and drain terminals. The amount of current that is allowed to flow between the source and drain terminals can be controlled by the gate voltage.
The SISS10DN-T1-GE3 has a maximum drain current of 10A and a maximum drain-to-source voltage of 30V. It is often used in power switching applications such as in motor control and high-power lighting control. It is also used in high-speed switching applications such as power MOSFET switches for computer power supplies.
The SISS10DN-T1-GE3 MOSFET is a semiconductor device that uses the field-effect principle to control the current flow between source and drain terminals. By applying a voltage at the gate terminal, the current flow between the source and drain terminals can be controlled. The device can be used as an electrical switch or as an amplifier, depending upon the application. The SISS10DN-T1-GE3 is widely used in power switching and high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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