SISS27ADN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SISS27ADN-T1-GE3TR-ND

Manufacturer Part#:

SISS27ADN-T1-GE3

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 50A POWERPAK1212
More Detail: P-Channel 30V 50A (Tc) 57W (Tc) Surface Mount Powe...
DataSheet: SISS27ADN-T1-GE3 datasheetSISS27ADN-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Series: TrenchFET® Gen III
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SISS27ADN-T1-GE3 is a discrete transistor device, made using N-channel MOSFET technology, and marketed by Diodes Inc. This type of transistor consists of a three-terminal gate which operates above or below the drain terminal, providing electrical power control with very high accuracy, and is often used to switch a current or voltage in high-speed circuits.

In terms of its application field, the SISS27ADN-T1-GE3 is most commonly used in low current load controller circuits where load currents are not significantly affected by the gate drive of the MOSFET. It is also often used in applications ranging from light dimmers to power switches and in digital interface systems such as memory fans and gaming systems.

Additionally, the SISS27ADN-T1-GE3 can also be used in digital output control applications such as lighting and audio control, as well as within digital control systems which require medium to high-power transistors. Due to its low power consumption, it can effectively replace a higher powered transistor, making it even more cost effective and reliable.

In terms of its working principle, the SISS27ADN-T1-GE3 works by controlling the flow of electric current through a circuit. In this way, it is able to provide accurate power control. This is done by utilizing a gate voltage higher or lower than its drain terminal, depending on the polarity of the circuit.

The SISS27ADN-T1-GE3 therefore provides very accurate control over current and voltage, making it ideal for high-speed circuits. It also has the capacity to handle low current levels which are less affected by its gate drive.

The SISS27ADN-T1-GE3 also has the advantage of being relatively easy to use, due to its simple construction and technology. It is also cost-effective and can be reliably used in applications ranging from lighting and audio control to digital interface systems.

To summarize, the SISS27ADN-T1-GE3 is a discrete N-channel MOSFET transistor manufactured by Diodes Inc. It is most often used as a low current load controller circuit as well as in digital output control applications, due to its ability to provide accurate power control with very high accuracy. Additionally, its simple construction and technology make it relatively easy to use, while its cost-efficiency and reliability further accentuate its appeal.

The specific data is subject to PDF, and the above content is for reference

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