SISS98DN-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	608pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 7.5V
Series:	ThunderFET®
Rds On (Max) @ Id, Vgs:	105 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14.1A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:The SISS98DN-T1-GE3 is a high power MOSFET and a high voltage switching device. It is a type of single transistor that uses a depletion layer and an insulated gate to control the flow of electrical current. This transistor is made from a P-type material, which is usually silicon, and is commonly used in high power application fields such as motor control, power electronics, and switching applications.Application Field:The primary application field for the SISS98DN-T1-GE3 is high power applications. This includes motor control, switching and power electronics applications. In motor control, it can be used to power multiple motors at once and to control their individual speeds. In switching applications, it is used to open and close switches, allowing electric current to be selectively passed through them. Lastly, in power electronics, it is used to convert electrical energy for efficient use in devices such as amplifiers and power supplies. Working Principle:The SISS98DN-T1-GE3 functions by using an insulated gate to control electric current. When the gate is closed, current cannot pass through the transistor. When the gate is opened, the current can pass through and a depletion layer forms, controlling the current to the desired level. The amount of current that passes through is determined by the amount of voltage applied to the gate. Advantages:This MOSFET has several advantages over traditional transistors. Firstly, it is very efficient in its power dissipation, allowing for more energy to be stored in the circuit, and is better able to withstand temperature changes. Additionally, it requires low gate current to control the current, which improves the efficiency and response rate of the circuit. Furthermore, since it is insulated, it is resistant to electric noise and interference, thereby increasing the reliability of the circuit. Disadvantages:Despite the advantages of the SISS98DN-T1-GE3, it has a few drawbacks. It is not very suitable for high speed applications as it has a slow switching speed due to the insulated gate. Additionally, it is prone to leakage current, which may be a problem for certain applications. Conclusion:The SISS98DN-T1-GE3 is a high power MOSFET and a high voltage switching device. It is designed for high power applications, such as motor control, switching, and power electronics. It functions using an insulated gate to control the electric current, which makes it more efficient and reliable than traditional transistors. Nevertheless, it has some drawbacks, such as slow switching speed and leakage current in certain conditions.

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