SISS27DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SISS27DN-T1-GE3TR-ND

Manufacturer Part#:

SISS27DN-T1-GE3

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 50A PPAK 1212-8S
More Detail: P-Channel 30V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface...
DataSheet: SISS27DN-T1-GE3 datasheetSISS27DN-T1-GE3 Datasheet/PDF
Quantity: 15000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 15000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SISS27DN-T1-GE3 is one of the many members of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) family. It is a single MOSFET, best characterized as a voltage-controlled, unipolar switch device. This particular transistor offers superior switching performance due to its relatively low input capacitance and low on-resistance. As a result, the SISS27DN-T1-GE3 is particularly well-suited for applications where high speed response and high power efficiency are critical.

The principle of operation for the SISS27DN-T1-GE3 can be best described in terms of its three terminals. The gate terminal, which is the input of the device, is used to control the current flow between the other two terminals, the drain and source. Depending on the magnitude of voltage applied to the gate terminal, the drain and source terminals can be switched from an off state to an on state, thereby controlling the current flow. This means that the current flow between the drain and source can be controlled by the voltage applied to the gate, not the power dissipation at the source.

The typical applications of the SISS27DN-T1-GE3 include switching power supplies, amplifiers, motor control circuits, and voltage regulators. These applications typically require high current capability and low power dissipation, both of which can be efficiently achieved using this transistor. Due to its moderate input capacitance, it is ideal for use in circuits with high frequency oscillations, such as switching power supplies.

In switch mode power supplies, the SISS27DN-T1-GE3 is used to sample and control the main power supply voltage. It does this by switching the power supply voltage at a pre-set frequency, typically several hundred kilohertz. This switching action allows for a much more efficient conversion of the power supply voltage, thereby increasing the overall efficiency of the system. In motor control circuits, the SISS27DN-T1-GE3 is utilized to alternately apply and disconnect the electric field needed to drive the motor.

In amplifiers, the SISS27DN-T1-GE3 is often used to reduce the overall gain at higher frequencies. This helps to prevent the amplification of harmonics and parasitic oscillations, which can disrupt audio performance. In voltage regulator circuits, the SISS27DN-T1-GE3 allows for multiple levels of output voltage to be precisely controlled. The voltage regulator circuitry contains a feedback loop which measures the output voltage and adjusts the gate voltage of the SISS27DN-T1-GE3 accordingly.

The SISS27DN-T1-GE3 has a variety of uses, enabling it to be deployed in a wide range of applications. It is a reliable, efficient device which provides superior switching performance and excellent power efficiency. That, coupled with its moderate input capacitance, makes the SISS27DN-T1-GE3 an excellent choice for power supply, amplifier, motor control, and voltage regulator applications.

The specific data is subject to PDF, and the above content is for reference

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