SISS26DN-T1-GE3

Vgs(th) (Max) @ Id:	3.6V @ 250µA
Package / Case:	PowerPAK® 1212-8S
Supplier Device Package:	PowerPAK® 1212-8S (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1710pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to SISS26DN-T1-GE3

The SISS26DN-T1-GE3 application field and working principle is a type of transistor design and a part of transferring electric current to achieve MOSFET technology in circuits. This type of transistor is mainly used in designing and manufacturing the various power transferring components, like movement switch, controllers, motors and others similar devices. This type of transistor is also often used in the device design involving high voltage and mid power, where speed and accuracy are the main objective.

What is a MOSFET?

MOSFET, also known as metal oxide semiconductor field-effect transistors, is a type of transistor that operates by transferring electric current across a layer of insulator between two terminals. It is an advanced semiconductor technology that is used in various modern transistor equipment. Unlike other types of transistor, MOSFET does not require a specific control element like a cathode, and the current can be controlled simply by adjusting the width of the insulator. This allows for faster and more accurate current transfer across the whole circuit, which is why it is commonly used in power transfer equipment.

SISS26DN-T1-GE3 Application Field and Working Principle

SISS26DN-T1-GE3 is a single MOSFET, which makes it ideal for applications that require fast and accurate current transfer across circuits. This type of MOSFET is generally used in power transferring components, where it is important to maintain a high efficiency while keeping the power loss at a minimum. Since the control element of this type of transistor is the insulator, the transistor works by adjusting the width of the insulator to control the current through it. As the width of the insulator changes, so does the amount of current flowing through the circuit. This makes the SISS26DN-T1-GE3 ideal for high-power, high-speed applications.Furthermore, due to the use of powerful MOSFET technology, this type of transistor usually offers better power transitioning and less power loss than most other types of transistors. This makes it an ideal choice for any application that requires fast and accurate power transfer.

Conclusion

The SISS26DN-T1-GE3 application field and working principle is thus a type of MOSFET transistor technology which is used in various power transferring components, such as motors, movement switch, controllers and others similar components. Its use of the powerful MOSFET technology makes it an ideal choice for any application that requires fast and accurate power transfer, with minimal power loss. Therefore, this type of transistor is ideal for any high-power, high-speed applications.

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