SISS65DN-T1-GE3

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The SISS65DN-T1-GE3 is a state of the art transistor engineered to offer powerful and reliable performance. It is one of the latest advances in field effect transistors, also known as FETs. The SISS65DN-T1-GE3 is a single MOSFET with a 65 Volt drain-source breakdown voltage. It has several applications across various industries, including in telecommunications, robotics, and industrial automation.

A field-effect transistor is a type of transistor that uses electrical current to control current flow in an electronic circuit. It has three main terminals, the Source, Drain, and Gate. The Source is the input end of the transistor and the Drain is the output end. The Gate is the control input for the transistor and determines the amount of current flow between the Source and Drain.

The SISS65DN-T1-GE3 is designed to switch quickly and reliably and is ideal for high current and low loss applications. It can be used in applications such as power regulators and switching power supplies, providing fast and reliable switching with low voltage drop. Its high breakdown voltage makes it suitable for use in high voltage switch applications.

The SISS65DN-T1-GE3 is capable of working at up to 170C junction temperatures and offers an ON-resistance rating of 0.23 ohms. This low resistance makes it ideal for high current applications and minimizes power dissipation. It also has a compliance voltage of up to 20 volts, making it suitable for a range of low voltage applications.

The SISS65DN-T1-GE3 offers both dynamic and static dV/dt capabilities, meaning it can maintain high speed switching performance in applications that require fast switching speeds. Its ESD protection of up to 8KV allows it to be used in ESD sensitive environments while still maintaining reliable performance.

The SISS65DN-T1-GE3 is capable of operating at a range of temperatures, from -55C to 175C. This makes it suitable for use in both low and high temperature applications. It also offers an integrated protection circuit which helps protect the device against over-current, over-voltage, and over-temperature conditions.

In summary, the SISS65DN-T1-GE3 is an advanced single MOSFET transistor with a 65 Volt breakdown voltage and a 0.23 Ohm ON-resistance rating. It is designed for high current and low loss applications and offers both dynamic and static dV/dt capabilities. With its integrated protection circuit and wide range of operating temperatures, the SISS65DN-T1-GE3 is a reliable and powerful device for a range of applications.

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