| Allicdata Part #: | SISS71DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SISS71DN-T1-GE3 |
| Price: | $ 6.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 23A 1212-8P-Channel 100V 23A (Tc)... |
| More Detail: | N/A |
| DataSheet: |  SISS71DN-T1-GE3 Datasheet/PDF |
| Quantity: | 993 |
| 1 +: | $ 6.77083 |
| 10 +: | $ 5.86806 |
| 100 +: | $ 4.73958 |
| 1000 +: | $ 4.51389 |
| 10000 +: | $ 4.28819 |
| Series: | ThunderFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 59 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 50V |
| FET Feature: | -- |
| Power Dissipation (Max): | 57W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® 1212-8S (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
| Base Part Number: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SISS71DN-T1-GE3 is a Triple-channel lateral diffused MOSFET (LDMOS) transistor that is primarily used as a high-efficiency, high-power amplifier in a variety of different applications. This transistor, which offers superior performance compared to traditional MOSFETs, is specially designed for high-performance and high-power applications in the RF and microwave industry.
The SISS71DN-T1-GE3 features three parallel channels, each of which is capable of handling up to 500 watts of peak power. These channels are configured to provide high-efficiency amplification without distortion, allowing for a very wide amplifier bandwidth of more than 300MHz. The channels also reduce thermal stress on the transistor, allowing for higher output power levels.
The SISS71DN-T1-GE3 also offers an extremely low acoustic noise figure and a very high input return loss. This makes the transistor a great choice for applications that require low-noise and high-accuracy output signals. The transistor also has very low input capacitance and low distortion, which makes it a great choice for high-frequency applications.
The working principle of the SISS71DN-T1-GE3 is based on the lateral diffused MOSFET technology. In this type of transistor, the source, drain, and gate terminals are all located on one side of the device. This allows for a much higher current density than in traditional MOSFETs, as well as a much wider bandwidth and superior linearity.
The SISS71DN-T1-GE3 is used in a variety of applications, including RF power amplifiers, cellular base station amplifiers, high-power microwave amplifiers, and RF generators. It is also used in the following fields: aerospace, medical, industrial, and military. Its superior RF performance and high reliability make it an ideal choice for these applications.
In general, the SISS71DN-T1-GE3 is a reliable and efficient transistor for a range of high-power and high-frequency applications. Its high current density and low distortion allow it to deliver superior performance with minimal distortion. As such, it is an ideal choice for any application where high power levels, wide bandwidths, and low noise levels are required.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SISS28DN-T1-GE3 | Vishay Silic... | 0.29 $ | 1000 | MOSFET N-CH 25V 60A POWER... |
| SISS26DN-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET N-CHANNEL 60V 60A ... |
| SISS98DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 14.1A 12... |
| SISS70DN-T1-GE3 | Vishay Silic... | 0.43 $ | 1000 | MOSFET N-CH 125VN-Channel... |
| SISS04DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 30V POWERPA... |
| SISS27DN-T1-GE3 | Vishay Silic... | -- | 15000 | MOSFET P-CH 30V 50A PPAK ... |
| SISS23DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 50A PPAK ... |
| SISS10DN-T1-GE3 | Vishay Silic... | 0.33 $ | 12000 | MOSFET N-CH 40V 60A PPAK ... |
| SISS64DN-T1-GE3 | Vishay Silic... | 0.44 $ | 15000 | MOSFET N-CHANNEL 30V 40A ... |
| SISS27ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 50A POWER... |
| SISS67DN-T1-GE3 | Vishay Silic... | 0.35 $ | 1000 | MOSFET P-CHAN 30V POWERPA... |
| SISS42DN-T1-GE3 | Vishay Silic... | 0.54 $ | 1000 | MOSFET N-CHAN 100V POWERP... |
| SISS72DN-T1-GE3 | Vishay Silic... | 0.55 $ | 1000 | MOSFET N-CH 150VN-Channel... |
| SISS12DN-T1-GE3 | Vishay Silic... | 0.37 $ | 1000 | MOSFET N-CHAN 40V POWERPA... |
| SISS40DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 36.5A PP... |
| SISS65DN-T1-GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET P-CHAN 30V PPAK 12... |
| SISS02DN-T1-GE3 | Vishay Silic... | 0.49 $ | 1000 | MOSFET N-CHAN 25V POWERPA... |
| SISS71DN-T1-GE3 | Vishay Silic... | 0.36 $ | 1000 | MOSFET P-CH 100V 23A 1212... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...