SISS23DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SISS23DN-T1-GE3 is a product manufactured by Infineon, a leading semiconductor manufacturer. It is a single N-Channel MOSFET designed for high-efficiency applications. The device comes in a PG-SSO-401-22 package, and is optimized for low on-resistance and high-accurate threshold voltage control.

MOSFETs (metal oxide semiconductor field effect transistors) are a type of field effect transistor (FET) which rely on the physical properties of their oxide layer to control the flow of current. They are highly efficient, making them ideal for use in high-efficiency applications such as power supply units and automotive systems. The SISS23DN-T1-GE3 is a single N-channel device, meaning that it is composed of two components the source and the drain. The source acts as the input, while the drain acts as the output. The control gate is placed between the two components and acts as an insulation barrier which regulates the current flow between the source and the drain.

When voltage is applied to the source, electrons are drawn into the MOS capacitor and accumulate at the bottom of the oxide layer. This electron field modifies the voltage at the gate, and within the applied voltage range positive or negative threshold voltage (Vtn), the MOSFET can be fully or partially-depleted to control current flow. This process is known as the “Body Effect”, and allows for precise control over the current flow and voltage between the source and drain.

The SISS23DN-T1-GE3 MOSFET has been designed for use in high-efficiency applications. It has a very low on-resistance, allowing for high power efficiency and low power losses. Its high-accurate threshold voltage control allows it to be used in a wide range of device types and applications, such as automotive power management and consumer electronics. The device is also RoHS-compliant, ensuring that it is safe to use in consumer products.

The SISS23DN-T1-GE3 is a highly efficient, accurate and reliable MOSFET which is ideal for use in a variety of power management and consumer electronics applications. Its low on-resistance and high-accurate threshold voltage control make it an invaluable component for achieving maximum efficiency in high-powered devices. It is also RoHS-compliant, making it safe for use in consumer products.

The specific data is subject to PDF, and the above content is for reference