SISS28DN-T1-GE3

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The SISS28DN-T1-GE3 transistor is a high-powered, metal-oxide semiconductor field-effect transistor (MOSFET) that can be used as an amplifier, switch or as a low-resistance voltage regulator. The device operates as an enhancement-mode MOSFET, meaning that when the gate voltage is increased beyond the threshold voltage (Vgs), the transistor will start conducting current at a lower resistance. This is advantageous for applications such as power control, dc-dc converters and motor control.

The SISS28DN-T1-GE3 is mainly suitable for medium-to-high power applications that require low on-state resistance, fast switching times and low quiescent current. The device is built with vertical power MOSFETs on a single silicon die, combining the excellent switching characteristics of the MOSFETs with a low-resistance package that can help reduce the power losses during operation. It also features an 8-pin mini-DIP package which facilitates the implementation of a wide variety of topologies. As such, the SISS28DN-T1-GE3 has a wide range of applications including power management, DC-DC converters, motor control, automotive power control and more.

The SISS28DN-T1-GE3 is a two-terminal device and the gate is used to control the current flow. The source terminal carries the source current while the drain terminal carries the drain current and this is the main power supply to the device. At the same time, a separate pin is provided to control the gate voltage which makes it easy to adjust the device’s input power. This makes it ideal for applications where the gate voltage needs to be changed frequently for varying output power. Additionally, the SISS28DN-T1-GE3 has a maximum drain-source breakdown voltage of 56V, which makes it suitable for use in applications with large voltage swings.

The SISS28DN-T1-GE3 features a low gate threshold voltage which allows for a quick switching time of just 85ns, ensuring that the transistor can switch quickly between states. The low on-state resistance (RDSon) of 0.0025Ω ensures that the device can easily handle high power while still maintaining low power losses during operation. The total gate charge (Qg) of 6.3nC and gate-to-source capacitance (Cgs) of 13.5pF mean that it is capable of switching frequencies as high as 3MHz, allowing for high frequency performance. Furthermore, the SISS28DN-T1-GE3 operates at very low quiescent currents, making it ideal for applications where power consumption needs to be kept to a minimum.

In summary, the SISS28DN-T1-GE3 is a high power, enhancement mode MOSFET featuring low on-state resistance, fast switching times, low quiescent current, and a wide range of applications. It has a low threshold voltage, resulting in a switching time of just 85ns, and a low on-state resistance. Additionally, its high-frequency performance and large breakdown voltage make it suitable for a wide range of applications. Furthermore, the SISS28DN-T1-GE3’s small 8-pin package allows for easy implementation in a variety of topologies. As such, it is ideal for use in power management, DC-DC converters, motor control, automotive power control and more.

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