SISS70DN-T1-GE3

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The SISS70DN-T1-GE3 is a high-performance silicon carbide (SiC) MOSFET (metal–oxide–semiconductor field effect transistor, also known as a metal–oxide–silicon field effect transistor or MOSFET) designed specifically to meet the power electronic needs of high frequency applications. Developed by Infineon, this device is part of the SOT 7091 family of SiC MOSFETs. The SISS70DN-T1-GE3\'s operating temperature range is -55°C to 175°C, and its peak junction temperature rating is 250°C.

The SiC MOSFET, along with its predecessor, the Silicon MOSFET, has been the preferred choice for power electronic needs in recent years. silicon MOSFETs have the highest power density, on-resistance and excellent EMI filtering capabilities; however, their relatively high switching losses and slow switching speed limit their potential applications. SiC MOSFETs, on the other hand, are able to overcome many of these limitations and can be used in higher frequencies and higher operating temperature applications.

The SISS70DN-T1-GE3 is specifically designed for applications where high power and efficiency are required but where the power density and switching speed are limited by existing silicon MOSFETs. This device combines an on-resistance of 7.0 mΩ@25 V and a maximum current rating of 70 A with low gate impedance, excellent thermal characteristics and fast switching speed, making it ideal for high-frequency systems that require accurate power delivery with minimal losses. The device has a breakdown voltage of 650 V and a maximum voltage rating of 795 V.

The SISS70DN-T1-GE3 operates on the principle of a voltage-controlled field effect transistor. In this type of transistor, an applied voltage causes electrons to move from the source to the drain, creating a conducting channel between the two electrodes. The current flowing through this channel is controlled by the voltage applied to the gate. As such, the SISS70DN-T1-GE3 can be used as a power switch for high-current, high-frequency applications.

The SISS70DN-T1-GE3 is specifically designed to be used in applications such as high-frequency power converters, high-voltage motor drives, high-current battery chargers, and a range of other power electronics applications. Its fast switching speed, low RDS(ON) and excellent thermal characteristics make it suitable for high-temperature and high-power applications. The device is also compatible with SiC diodes for improved EMI filtering and reduced switching losses.

In summary, the SISS70DN-T1-GE3 is a high-performance Silicon Carbide MOSFET designed specifically to meet the needs of high-frequency applications. Its high-current and high-voltage ratings, fast switching speed, low RDS(ON), and excellent thermal characteristics make it ideal for high-power and high-temperature applications. It is compatible with SiC diodes for improved EMI filtering and switching efficiency and is suitable for a range of power electronics applications.

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