SISS42DN-T1-GE3

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The SISS42DN-T1-GE3 is a field-effect transistor (FET) designed for use in power electronics applications. It is a single-channel, n-channel MOSFET, meaning it has one gate, a positive gate voltage, a negative drain voltage, and an enhanced on-resistance compared to other types of FETs.

The SISS42DN-T1-GE3 is an ideal choice for applications requiring low power consumption and high reliability. Its low on-resistance allows it to operate at low voltages while providing high efficiency. Its structure also makes it suitable for desensitization of low-voltage signals.

The SISS42DN-T1-GE3 also features a temperature-compensated operation. This is important in power applications, as it ensures the device remains stable even in the presence of extreme heat. The temperature compensation also allows the device to maintain its performance over time.

The device is designed to work on a single supply voltage, which is between 5V and 12V. It is designed to operate within a temperature range of -55 ˚C to 150 ˚C. It has a small package size, making it suitable for high-density applications. The SISS42DN-T1-GE3 also features an adjustable output current range. This allows the device to be optimized for different power applications.

The device also features an anti-parallel connection for higher current handling capability. This is important for applications such as motor control, where high efficiency and power are necessary. The anti-parallel connection also provides EMI protection from its source.

The working principle of the SISS42DN-T1-GE3 is based on drain-gate capacitance. This capacitance creates a current path between the drain and gate. The amount of current that can flow through the device is determined by the voltage applied to the gate. The gate voltage determines the amount of current that passes through the device.

The SISS42DN-T1-GE3 has a maximum drain current of 32 amps and a maximum drain-source voltage of 12V. Its on-resistance is 0.11 ohms and its drain gate capacitance is 10pF. Its power dissipation is up to 600V at a maximum current of 33A.

The SISS42DN-T1-GE3 is a versatile and reliable FET that is suitable for numerous power electronics applications. Its temperature-compensated operation and adjustable output current range make it a great choice for applications requiring low-voltage, high-efficiency operations. Its anti-parallel connection and low on-resistance provide ample protection against interference and higher current capabilities, making it an ideal choice for high-power applications.

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