| Allicdata Part #: | SMMBT4401LT1GOSTR-ND |
| Manufacturer Part#: |
SMMBT4401LT1G |
| Price: | $ 0.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 40V 0.6A SOT23Bipolar (BJT) Transistor N... |
| More Detail: | N/A |
| DataSheet: |  SMMBT4401LT1G Datasheet/PDF |
| Quantity: | 24997 |
| 1 +: | $ 0.10000 |
| 10 +: | $ 0.05000 |
| 50 +: | $ 0.04000 |
| 500 +: | $ 0.03000 |
| 1000 +: | $ 0.02000 |
| 3000 +: | $ 0.01500 |
| 6000 +: | $ 0.01200 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| FET Type: | -- |
| Part Status: | Active |
| Technology: | -- |
| Transistor Type: | NPN |
| Drain to Source Voltage (Vdss): | -- |
| Current - Collector (Ic) (Max): | 600mA |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
| Rds On (Max) @ Id, Vgs: | -- |
| Current - Collector Cutoff (Max): | -- |
| Vgs(th) (Max) @ Id: | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Power - Max: | 300mW |
| Vgs (Max): | -- |
| Frequency - Transition: | 250MHz |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| FET Feature: | -- |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | -- |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBT4401 |
1. Description
This NPN SMMBT4401LT1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
2. Features
1. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
2. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
3. SWITCHING TIME EQUIVALENT TEST CIRCUITS
Turn−On Time Turn−Off Time
4. PACKAGE DIMENSIONS
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