SMMBT2222AWT1G Allicdata Electronics

SMMBT2222AWT1G Discrete Semiconductor Products

Allicdata Part #:

SMMBT2222AWT1GOSTR-ND

Manufacturer Part#:

SMMBT2222AWT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A SOT323
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150m...
DataSheet: SMMBT2222AWT1G datasheetSMMBT2222AWT1G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04473
6000 +: $ 0.03890
15000 +: $ 0.03306
30000 +: $ 0.03112
75000 +: $ 0.02918
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MMBT2222A
Description

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The SMMBT2222AWT1G is a NPN bi-polar junction transistor (BJT) housed in SC-88A, SOT-363, and SOT-553 packages. It is classified under Transistors - Bipolar (BJT) - Single. The device informs the user of its application field and working, which is explained in this article.

Application field

The SMMBT2222AWT1G has various application fields. It is mainly used for general-purpose switching and amplification applications. It is also used for pre-driver stages in audio output amplifiers, IF pre-amplifiers in FM radio systems and in fast switching applications. The device is commonly used in computers, cell phones, digital cameras and other electronic products.

Working Principle

The SMMBT2222AWT1G is a NPN BJT device; this means it operates using the same principle as a conventional transistor, where current is allowed to flow through the device when a small current is applied on the base. The transistor is referred to as NPN because of the way its components are arranged; the emitter is connected to ground and the collector and base are connected to the operating voltage.

When the base is given a small current, a larger current is allowed to flow through the emitter-collector circuit, causing the transistor to switch on and enabling the current to flow through. When the current is removed, the transistor switches off and the current is blocked. The switching speed of the SMMBT2222AWT1G is dependent on the base current given; the higher the base current, the faster the switching speed.

The SMMBT2222AWT1G device has a high switching speed, even at low base currents. This makes it ideal for switching applications, as it can switch faster than most transistors of the same type. It has a maximum gain of 120 mA/V and a voltage collector-emitter breakdown of 30V.

In addition to its fast switching speed, the SMMBT2222AWT1G is a low-power device; it has a maximum power dissipation of 170mW, and a maximum operating current of 400mA. This makes it ideal for low-power applications, such as in mobile phones and other portable devices. Its low dissipation and low cost also make it ideal for high volume applications.

The SMMBT2222AWT1G is a versatile device; its small size and low cost makes it ideal for a wide variety of applications. It is also very reliable, and can operate for long periods of time without any degradation in performance. It is thus suitable for use in critical applications, such as in automotive and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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