| Allicdata Part #: | SMMBTA42LT3GOSTR-ND |
| Manufacturer Part#: |
SMMBTA42LT3G |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 300V 0.5A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 225m... |
| DataSheet: | SMMBTA42LT3G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.03200 |
| 10 +: | $ 0.03104 |
| 100 +: | $ 0.03040 |
| 1000 +: | $ 0.02976 |
| 10000 +: | $ 0.02880 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
| Power - Max: | 225mW |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBTA42 |
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A SMMBTA42LT3G is a single Bipolar Junction Transistor (BJT). This type of transistor is a three-layer device that is made up of two base layer materials - one p-type layer and one n-type layer. The junction between the two base layer materials creates a p-n junction that is used to control and direct the flow of electrons. This type of transistor is commonly used in a variety of applications, such as in amplifying, switching, and regulating signals.
The SMMBTA42LT3G is a high-voltage, low-power BJT with a low-current rating. It is designed for use in applications that require a high breakdown voltage with a low threshold current. The SMMBTA42LT3G has an emitter-base voltage rating of 12 volts, a collector-base volt rating of 25 volts, an emitter-collector voltage rating of 10 volts, and a current gain hFE rating of 25-100.
The working principle of the SMMBTA42LT3G is based on the principle of transistor action. Transistors are three-terminal devices made from semiconductor materials. When a small current flows through the base of the transistor, it causes a much larger current to flow through the collector and emitter. This phenomenon is known as transistor action, which is utilized in a number of electronic circuits to amplify, switch and regulate signals.
The SMMBTA42LT3G can be used for a variety of applications, such as in transistor-based amplifiers and switch circuits. The most common use for the SMMBTA42LT3G is in low-power AF amplifiers and single-tone radio receivers. Additionally, the SMMBTA42LT3G can be used as a relay switch in switching circuits, such as logic gates.
Due to its high-voltage rating, the SMMBTA42LT3G is also commonly used in applications that require a higher breakdown voltage than what is provided by other BJTs. These applications include high-power, fast-switching circuits, such as high-power transmitters, DC motors, or high-voltage DC-DC converters.
The SMMBTA42LT3G is an excellent choice for applications that require a high-voltage, low-power device with excellent electrical and thermal properties. Not only is it robust and reliable, but it also offers a low threshold current and high current gain, making it an ideal choice for a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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SMMBTA42LT3G Datasheet/PDF