SMMBTA42LT3G Allicdata Electronics
Allicdata Part #:

SMMBTA42LT3GOSTR-ND

Manufacturer Part#:

SMMBTA42LT3G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 225m...
DataSheet: SMMBTA42LT3G datasheetSMMBTA42LT3G Datasheet/PDF
Quantity: 1000
1 +: $ 0.03200
10 +: $ 0.03104
100 +: $ 0.03040
1000 +: $ 0.02976
10000 +: $ 0.02880
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 225mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA42
Description

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A SMMBTA42LT3G is a single Bipolar Junction Transistor (BJT). This type of transistor is a three-layer device that is made up of two base layer materials - one p-type layer and one n-type layer. The junction between the two base layer materials creates a p-n junction that is used to control and direct the flow of electrons. This type of transistor is commonly used in a variety of applications, such as in amplifying, switching, and regulating signals.

The SMMBTA42LT3G is a high-voltage, low-power BJT with a low-current rating. It is designed for use in applications that require a high breakdown voltage with a low threshold current. The SMMBTA42LT3G has an emitter-base voltage rating of 12 volts, a collector-base volt rating of 25 volts, an emitter-collector voltage rating of 10 volts, and a current gain hFE rating of 25-100.

The working principle of the SMMBTA42LT3G is based on the principle of transistor action. Transistors are three-terminal devices made from semiconductor materials. When a small current flows through the base of the transistor, it causes a much larger current to flow through the collector and emitter. This phenomenon is known as transistor action, which is utilized in a number of electronic circuits to amplify, switch and regulate signals.

The SMMBTA42LT3G can be used for a variety of applications, such as in transistor-based amplifiers and switch circuits. The most common use for the SMMBTA42LT3G is in low-power AF amplifiers and single-tone radio receivers. Additionally, the SMMBTA42LT3G can be used as a relay switch in switching circuits, such as logic gates.

Due to its high-voltage rating, the SMMBTA42LT3G is also commonly used in applications that require a higher breakdown voltage than what is provided by other BJTs. These applications include high-power, fast-switching circuits, such as high-power transmitters, DC motors, or high-voltage DC-DC converters.

The SMMBTA42LT3G is an excellent choice for applications that require a high-voltage, low-power device with excellent electrical and thermal properties. Not only is it robust and reliable, but it also offers a low threshold current and high current gain, making it an ideal choice for a variety of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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