SMMBT4403LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	300mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT4403

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SMMBT4403LT1G is one of the most common transistors used in the modern electronics market. It is a single bipolar junction transistor (BJT) type and the first letter of its name stands for the NPN polarity of the transistor. It is a small signal transistor with a low power dissipation ratings and low noise which makes it suitable for a range of applications in the consumer, automotive, and industrial markets.The SMMBT4403LT1G can be used in switching, low-noise amplification, and low-frequency filtering applications. It is ideal for design engineers who want to include small signal amplification in their designs without having to worry about power dissipation or noise issues. This transistor has a low saturation voltage, gain-bandwidth product, and is a silicon-based BJT. It has an NPN polarity and is a surface-mount device with three pins.The most common application of the SMMBT4403LT1G is in low-noise audio and video amplifiers. It is used in pre-amplifiers, headphone amplifiers, and various audio and video monitoring equipment. They can also be used in transistor-outputing analog switches, voltage controllers, and oscillators. This transistor can be used in a range of consumer, industrial and automotive electronics that require low-power and low-noise.The working principle of the SMMBT4403LT1G is based on the same principle as other transistors. It is a three-pin part consisting of an emitter, base, and collector. Current flows from the emitter to the base which then allows current flow from the collector to the emitter. The amount of current flowing between the emitter and collector is controlled by the amount of current passing through the base. This is commonly referred to as current gain or the hfe of the transistor.The SMMBT4403LT1G has a base-emitter voltage of 1.15V and a collector-emitter saturation voltage of 0.2V. The current gain is typically between 50 and 200 depending on the particular part. The hfe is also affected by the collector current and if the collector current is too high, the hfe will drop significantly. The maximum collector current is 1A and the total power dissipation is 350mW.In summary, the SMMBT4403LT1G is a single bipolar junction transistor (BJT) used in a variety of applications. It is a low-power surface-mount device with low noise and high hfe ratings. It has three pins consisting of an emitter, base, and collector and the current flow between the emitter and collector is controlled by the amount of current passing through the base. This transistor is ideal for use in switching, filtering, and low-noise amplification applications in the consumer, automotive, and industrial markets.

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