SMMBFJ177LT1G Allicdata Electronics

SMMBFJ177LT1G Discrete Semiconductor Products

Allicdata Part #:

SMMBFJ177LT1GOSTR-ND

Manufacturer Part#:

SMMBFJ177LT1G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS JFET P-CH SOT23
More Detail: JFET P-Channel 30V 225mW Surface Mount SOT-23 (TO...
DataSheet: SMMBFJ177LT1G datasheetSMMBFJ177LT1G Datasheet/PDF
Quantity: 3000
3000 +: $ 0.07828
6000 +: $ 0.07353
15000 +: $ 0.06879
30000 +: $ 0.06309
75000 +: $ 0.06072
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Resistance - RDS(On): 300 Ohms
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Description

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SMMBFJ177LT1G Application Field and Working Principle

Introduction

The SMMBFJ177LT1G is a Field-Effect Transistor (FET) that belongs to the family of Junction Field-Effect Transistors (JFETs). It is a two-terminal device, where voltage is applied between the two terminals, and the current flow is controlled by another voltage. JFETs are often used in analog and digital circuits to amplify and switch signals. JFETs are also a type of semiconductor that is used in the manufacture of many electronic components.

Application Field

The SMMBFJ177LT1G is a popular part used in many applications. It is frequently used in audio equipment and power amplifiers, where it controls the flow of current. It can also be used in low-noise applications, such as cellular base station receivers, RF receivers, and medical instruments. It is also used in industrial applications, such as in motor speed controls, robotics, and remote sensing.

Working Principle

The SMMBFJ177LT1G works by using a reverse-biased p-n junction between two semiconductor materials. This reverse-bias creates an electric field that forces the majority carriers, holes (positive charge carriers) in the p-type material and electrons (negative charge carriers) in the n-type material, away from the junction in uniformed lines. This creates a depletion region, or depletion layer, that has no free charge carriers and acts as an insulator. The depletion layer is a region of high resistance, and any current that attempts to flow through it is blocked. Gate voltage is then applied to the two terminals, controlling the width of the depletion region, and the current flow is modulated.

Conclusion

The SMMBFJ177LT1G is a JFET device that is used in many applications including audio, power amplifiers, and industrial motors. It works by using a reverse-biased p-n junction to create a depletion region that acts as an insulator. The gate voltage then determines the width of the depletion region and allows for current modulation.

The specific data is subject to PDF, and the above content is for reference

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