SMMBFJ177LT1G Discrete Semiconductor Products |
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Allicdata Part #: | SMMBFJ177LT1GOSTR-ND |
Manufacturer Part#: |
SMMBFJ177LT1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS JFET P-CH SOT23 |
More Detail: | JFET P-Channel 30V 225mW Surface Mount SOT-23 (TO... |
DataSheet: | SMMBFJ177LT1G Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.07828 |
6000 +: | $ 0.07353 |
15000 +: | $ 0.06879 |
30000 +: | $ 0.06309 |
75000 +: | $ 0.06072 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 11pF @ 10V (VGS) |
Resistance - RDS(On): | 300 Ohms |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SMMBFJ177LT1G Application Field and Working Principle
Introduction
The SMMBFJ177LT1G is a Field-Effect Transistor (FET) that belongs to the family of Junction Field-Effect Transistors (JFETs). It is a two-terminal device, where voltage is applied between the two terminals, and the current flow is controlled by another voltage. JFETs are often used in analog and digital circuits to amplify and switch signals. JFETs are also a type of semiconductor that is used in the manufacture of many electronic components.
Application Field
The SMMBFJ177LT1G is a popular part used in many applications. It is frequently used in audio equipment and power amplifiers, where it controls the flow of current. It can also be used in low-noise applications, such as cellular base station receivers, RF receivers, and medical instruments. It is also used in industrial applications, such as in motor speed controls, robotics, and remote sensing.
Working Principle
The SMMBFJ177LT1G works by using a reverse-biased p-n junction between two semiconductor materials. This reverse-bias creates an electric field that forces the majority carriers, holes (positive charge carriers) in the p-type material and electrons (negative charge carriers) in the n-type material, away from the junction in uniformed lines. This creates a depletion region, or depletion layer, that has no free charge carriers and acts as an insulator. The depletion layer is a region of high resistance, and any current that attempts to flow through it is blocked. Gate voltage is then applied to the two terminals, controlling the width of the depletion region, and the current flow is modulated.
Conclusion
The SMMBFJ177LT1G is a JFET device that is used in many applications including audio, power amplifiers, and industrial motors. It works by using a reverse-biased p-n junction to create a depletion region that acts as an insulator. The gate voltage then determines the width of the depletion region and allows for current modulation.
The specific data is subject to PDF, and the above content is for reference
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