Allicdata Part #: | SMMBTA92LT3GOSTR-ND |
Manufacturer Part#: |
SMMBTA92LT3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 300m... |
DataSheet: | SMMBTA92LT3G Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.03673 |
30000 +: | $ 0.03443 |
50000 +: | $ 0.03061 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBTA92 |
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Transistors are an essential component of integrated circuits and other electrical components. A single bipolar junction transistor (BJT) is a three-terminal device composed of three semiconductor regions. SMMBTA92LT3G is a type of BJT used in various applications due to its excellent performance and wide variety of features.
The SMMBTA92LT3G is a high-power bipolar junction transistor used in various high-performance circuit applications. It provides excellent high-frequency gain and low noise levels. Its additional features include low saturation voltage, quality current gain, and high-temperature durability. Due to its superior performance, it is often used in power amplifiers, switching circuits, RF circuits, and pulse circuits.
The basic operating principle of the SMMBTA92LT3G is similar to other BJTs. The device consists of three terminals: the base, the collector, and the emitter. In normal operation, the base-emitter junction is in forward bias, meaning that the positive supply voltage is applied to the base and the negative supply voltage is applied to the emitter. The collector is connected to a load. As the base current increases, current is also drawn from the emitter and flows through the collector.
When the base current is sufficient to overcome the voltage drop across the collector—emitter, electrons are accelerated through the transistor and current begins to flow through the collector. This is known as saturation. The collector current increases exponentially with an increase in the base current.The current gain of the SMMBTA92LT3G is an important parameter; it is the ratio of output current to input current. The higher the current gain, the better the device’s performance.
The SMMBTA92LT3G is a versatile device and is used in various applications such as signal processing, signal amplification, power amplification, motor control, and switching. It is also used as an RF amplifier in communication systems such as cellular networks, Wi-Fi, and Bluetooth. In addition, it is used for low-noise audio amplification and for powering small consumer electronics.
The SMMBTA92LT3G is a high-performance, high-power bipolar junction transistor and can be used in various applications due to its excellent performance and wide variety of features. It has a wide voltage range, good gain linearity, low noise levels, and excellent high-frequency gain. Its robust design ensures long-term reliability and performance. As such, it is a reliable and versatile device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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