Allicdata Part #: | SMMBTH10-4LT3G-ND |
Manufacturer Part#: |
SMMBTH10-4LT3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN VHF/UHF SOT23 |
More Detail: | RF Transistor NPN 25V 800MHz 225mW Surface Mount ... |
DataSheet: | SMMBTH10-4LT3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05865 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 800MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 4mA, 10V |
Current - Collector (Ic) (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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It is essential to understand the application field and working principle of the SMMBTH10-4LT3G transistors in order to properly select and use them. It is often referred to as a bipolar (BJT) RF transistor, so it can be used in a variety of applications requiring high frequency operation or high switching speed. Generally, this type of transistor is used for amplification of low frequency signals, switching, and communications applications. This article will cover the different application fields and the working principle of the SMMBTH10-4LT3G.
First, let\'s look at some of the application fields where this type of transistor is often found. As an RF device, the SMMBTH10-4LT3G can be used in wireless communication systems as a power amplifier, oscillator, or a switch. It can also be used in high frequency systems to amplify signals, such as those used in TV receivers or modems. Additionally, this type of transistor is often used in military and commercial avionics applications.
Second, let\'s consider the principles of how this device works. These transistors are based on two layers of N-type semiconductor material and one layer of P-type material. This structure is called an NPN structure, meaning the device is able to control current flow from a base to an emitter by controlling the voltage applied to the base. The base-emitter junction acts as a switch, and the N-type and P-type layers determine the RF characteristics. The current entering the base is amplified by the collector and exits the device through the emitter.
Finally, these transistors can be found in a wide range of different packages and performance levels that are designed to suit the needs of various applications. Package size and parasitic capacitances are important parameters to consider when selecting the right transistor for a given application. The SMMBTH10-4LT3G has a low capacitance and can be used in both low noise and high gain amplifiers. It is also relatively cheap compared to other types of transistors and is, therefore, attractive for low cost designs.
In conclusion, the SMMBTH10-4LT3G is a type of transistor that can be used in a variety of RF applications, such as wireless communications and high frequency systems. It is based on an NPN structure and works by amplifying the current entering the base. This type of device is often found in packages of different sizes and levels of performance and is relatively cheap compared to other types of transistors. Therefore, it is a good choice for low cost designs and applications requiring high speed or high frequency operation.
The specific data is subject to PDF, and the above content is for reference
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