| Allicdata Part #: | SMMBTA64LT1G-ND |
| Manufacturer Part#: |
SMMBTA64LT1G |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP DARL 30V 0.5A SOT23 |
| More Detail: | Bipolar (BJT) Transistor PNP - Darlington 30V 500m... |
| DataSheet: |  SMMBTA64LT1G Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.04918 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Darlington |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
| Power - Max: | 225mW |
| Frequency - Transition: | 125MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBTA64 |
Description
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The SMMBTA64LT1G is a popular bipolar junction transistor (BJT) from STMicroelectronics. It is designed for use in a variety of applications ranging from computing and general-purpose logic to automotive electronics. This article will provide an overview of the SMMBTA64LT1G\'s application fields and working principle.
Introduction to Bipolar Junction Transistors (BJTs)
A bipolar junction transistor (BJT) is a type of semiconductor device that can be used to amplify and switch electronic signals and electrical power. BJTs consist of three main elements: the emitter, the base, and the collector. BJTs are often classified by their structure as either a BJT NPN or a BJT PNP. BJTs have a number of applications, from amplifying radio signals to operating logic gates or as a switch in a power amplifier.Features of the SMMBTA64LT1G
The SMMBTA64LT1G is a NPN PNP BJT from STMicroelectronics. It has an operating voltage range of 1.2 V to 75 V and a maximum current gain of 1,000. The SMMBTA64LT1G has an operating temperature range of -40 °C to +200 °C and is lead (Pb)-free and RoHS compliant. The SMMBTA64LT1G is available in a variety of package options including packaged die, surface mount, and through-hole mounting.Applications of the SMMBTA64LT1G
The SMMBTA64LT1G is suitable for a wide range of applications including DC-DC converters, AC/DC power supplies, automotive power applications, and audio/video components. Additionally, the SMMBTA64LT1G can be used in computing and general-purpose logic applications such as inverters, buffer circuits, and power switches.Working Principle of the SMMBTA64LT1G
The SMMBTA64LT1G is a NPN (Negative Positive Negative) type BJT. In a NPN BJT, current flowing from the emitter to the collector causes electrons to be injected into the base region, creating an inversion layer which acts as an ohmic contact between emitter and collector. This inversion layer, which is known as the base region, is the area responsible for most of the BJT\'s action.The junction of the emitter, base, and collector is known as the depletion region. The width of the depletion region determines the amount of current that can flow between the emitter and the collector. The base-collector junction serves as a voltage-controlled current source, allowing for the amplification of small signals. In order for the BJT to amplify a signal, a small base current is required. When a small forward base bias is applied, the voltage across the base-collector junction allows for current flow from the collector to the emitter. This results in the output current to be larger than the input current, resulting in a gain (β) from the output-to-input signal ratio.The gain (β) of a BJT is determined by the ratio of the collector current to the base current. The output signal can be inverted or non-inverted depending on the BJT\'s configuration.Conclusion
The SMMBTA64LT1G is a popular bipolar junction transistor (BJT) from STMicroelectronics. It is designed for use in a variety of applications ranging from computing and general-purpose logic to automotive electronics. This article provided an overview of the SMMBTA64LT1G\'s application fields and working principle. BJTs are a type of semiconductor device that can be used to amplify and switch electronic signals and electrical power. The SMMBTA64LT1G has an operating voltage range of 1.2 V to 75V and a maximum current gain of 1000. Additionally, the SMMBTA64LT1G can be used for DC-DC converters, AC/DC power supplies, automotive power applications, and audio/video components. The working principle of the SMMBTA64LT1G is based on a base current which is used to amplify a signal allowing for a gain (β) from the output-to-input signal ratio.The specific data is subject to PDF, and the above content is for reference
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