SMMBT3904WT1G Allicdata Electronics
Allicdata Part #:

SMMBT3904WT1GOSTR-ND

Manufacturer Part#:

SMMBT3904WT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.2A SOT323
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150m...
DataSheet: SMMBT3904WT1G datasheetSMMBT3904WT1G Datasheet/PDF
Quantity: 1000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MMBT3904
Description

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The SMMBT3904WT1G is a NPN transistor commonly used in electronics. It belongs to the bipolar junction transistor (BJT) family. As a single device in use, it has a variety of applications and procedures for operation.

The SMMBT3904WT1G is used in digital and linear circuitry. It is used in switching applications, such as audio and video switching, in addition to amplifiers and oscillators, electronic circuits that require analog and digital signals. The SMMBT3904WT1G can be used in the output or input stages of power amplifiers, motor applications, and other industrial, audio, and video applications.

For operation, the SMMBT3904WT1G requires a system of 3 external connections, called the emitter, collector, and base. These three components are responsible for the transmission of current and therefore the production of electrical energy. The emitter is the negative pole, while the collector is the positive pole. The base is responsible for controlling the current flow and voltage through the device.

The emitter-collector voltage defines the energy intensity of the device. As the emitter-collector voltage increases, so does the output power. The base-emitter voltage influences the output current. The reverse current of the SMMBT3904WT1G is normally determined by the input current to the base.

The SMMBT3904WT1G has a high current gain of up to 800 and can deliver up to 800mA of output current. It also has a low saturation voltage of 0.3V. To ensure the optimal performance of the device, it must be operated within its specified safe limits, meaning that the voltage and power levels should not exceed what the device is rated for.

Finally, the SMMBT3904WT1G offers a high resistance to temperature and is capable of withstanding temperatures as high as 200 degrees Celsius. This makes it suitable for use in a wide range of environments.

In conclusion, the SMMBT3904WT1G is a versatile, single BJT transistor used in a multitude of applications. It requires three external connections and can deliver up to 800mA of output current. It has a high current gain and can withstand high temperatures. It is capable of amplifying both analog and digital signals, making it a highly useful and useful item for use in many different circuits.

The specific data is subject to PDF, and the above content is for reference

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