SMMBT3904LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	300mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT3904

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SMMBT3904LT1G is a NPN Si-based high voltage and low current bi-polar transistor manufactured by Texas Instruments. It is primarily used in switching and switching applications as it has a fast transition time out of saturation. Its maximum average power dissipation of up to 1 Watt combined with its maximum voltage rating of 70 Volts, means it is ideal for use in low-power high-performance circuits. SMMBT3904LT1G\'s application field covers various industries, such as consumer electronics, automotive, medical, telecommunications and industrial control. It is suitable for low-noise or high-voltage applications that require fast switching. It can be used in applications such as load switches and voltage regulators, as it has well-defined turn-on and turn-off characteristics. This transistor also has excellent ESD ratings, making it well suited for applications that require reliable operation in hazardous environments. The SMMBT3904LT1G\'s working principle is essentially a modification of the conventional "pill-box" transistor design. The base-emitter junction of the transistor is optimized for fast switching times and low saturation voltage. The collector and emitter leads have protection diodes, which prevent damage from electrostatic discharge and voltage spikes. The SMMBT3904LT1G is constructed from a single Si die, which is encapsulated in a molded plastic case. The base and collector leads are connected to the die using ultra-high voltage technology. The resulting transistor has a rugged construction and is capable of withstanding high temperatures.The SMMBT3904LT1G is capable of delivering high-speed switching frequencies and current drives. Its critical power ratings, combined with its fast switching capabilities, make it a popular choice for blocking and switching applications, where low power consumption and high speed performance are required. Its relatively low voltage rating, makes it only suitable for a few applications. However, its low power consumption, fast switching capabilities and excellent ESD ratings make it a popular choice where space and power consumption are at a premium. In summary, the SMMBT3904LT1G is a NPN Si-based high voltage and low current bi-polar transistor manufactured by Texas Instruments. It is primarily used in switching and switching applications as it has a fast transition time out of saturation. Its maximum average power dissipation of up to 1 Watt combined with its maximum voltage rating of 70 Volts, means it is ideal for use in low-power high-performance circuits. Its application field covers various industries such as consumer electronics, automotive, medical, telecommunications and industrial control. The transistor has excellent ESD ratings, making it well suited for applications that require reliable operation in hazardous environments. The SMMBT3904LT1G\'s working principle is essentially a modification of the conventional "pill-box" transistor design and is capable of delivering high-speed switching frequencies and current drives.

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