Allicdata Part #: | SMMBD2837LT1G-ND |
Manufacturer Part#: |
SMMBD2837LT1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY GP 30V 150MA SOT23-3 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 30V 150... |
DataSheet: | SMMBD2837LT1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.04977 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io) (per Diode): | 150mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 30V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBD2837 |
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Diodes - Rectifiers - Arrays
SMMBD2837LT1G is a general-purpose Silicon MOSFET rectifier intended for use in low voltage, high frequency switch mode power supplies for applications such as AC/DC converters, converters, and DC-DC converters.
It has a 40 V drain-source ratings, a drain current of 600mA, and a typical on-state resistance of 0.66 Ω. This MOSFET rectifier also features an input capacitance of 1000 pF.
The SMMBD2837LT1G provides a relatively simple, low-cost solution, free from the complexity of gate protection circuitries.
Application Fields
The SMMBD2837LT1G MOSFET rectifier is suitable for the following applications:
- DC/DC converters
- AC/DC converters
- DC-DC Switching Converters
- Low Voltage/High Frequency Switch Mode Power Supply
Working Principle of SMMBD2837LT1G
The SMMBD2837LT1G MOSFET rectifier works in a similar way as other MOSFET devices. It has a source, a drain, and a gate. During operation, a voltage difference between the source and the drain creates an electric field that drives turns the device on. When the gate voltage increases, the electric field strength also increases, causing it to turn on more rapidly.
As the voltage between the source and drain increases, the electric field strength also increases, causing the current to increase. This increase in current causes the gate voltage to rise, which in turn causes the transistor to turn on more rapidly. This positive feedback effect eventually results in the device achieving its maximum current.
The SMMBD2837LT1G MOSFET rectifier also features a fast, on-state operation, with a low on-state resistance (RDS). This ensures it has relatively high efficiency, with very little power dissipated during switching, making it ideal for power supplies operating at high frequencies.
Furthermore, the device has a long and high breakdown voltage, making it suitable for use in low voltage and low frequency power supplies. It also has an input capacitance, which makes it suitable for use in AC/DC converters.
Conclusion
The SMMBD2837LT1G MOSFET rectifier is suitable for use in a variety of applications, including AC/DC converters, DC/DC converters, and low voltage/high frequency switch mode power supplies. It has a fast on-state operation, a low on-state resistance, a long and high breakdown voltage, and an input capacitance. All of these features make it an ideal rectifier for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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