SMMB911DK-T1-GE3

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The SMMB911DK-T1-GE3 is an n-channel, depletion-mode, low-voltage, Power MOSFET family designed to deliver high performance and power efficiency with low power consumption. The SMMB911DK-T1-GE3 offer very low on-resistance values and excellent thermal resistance. This device features a high-voltage ESD protection level of the body-to-drain configuration which enables robust ESD protection. It offers high-speed switching capability and is suited for many DC/DC applications.

The SMMB911DK-T1-GE3 is well suited for applications such as power management, DC-to-DC converters, controllers, and amplifiers. Its wide range of applications includes motion control and linear/switch-mode power management. Its low voltage feature makes it ideal for battery-powered applications. In addition, it can be used in a wide range of switch-mode power applications including OR power supplies, AC-DC converters and DC-DC converters.

The SMMB911DK-T1-GE3 is a 6KE18C device types MOSFET array. In this device, three independent n-channel MOSFET stages are integrated into one device. Each stage has its own gate, drain and source pins. The main advantage of this device array is that it allows multiple devices to be controlled by a single gate signal. This reduces the complexity of the circuit and saves time and cost. The device also features a low threshold voltage and a low RDS(ON) that allows for faster switching. All stages can be independently controlled by their corresponding gate pins.

The basic operating principle of the SMMB911DK-T1-GE3 is to switch the on/off state of the MOSFET stages in response to the gate voltage applied. When the gate voltage is below the threshold voltage, the MOSFET stage is off and all currents are blocked. When the gate voltage is above the threshold voltage, the MOSFET stage is on, which allows current to flow from the source to the drain. The amount of current that can flow through the device depends on the gate voltage and the drain-source resistance. This device has a low RDS(ON) to minimize power loss and reduce power consumption when in the on-state.

In summary, the SMMB911DK-T1-GE3 is a high-performance, low-voltage, array of n-channel Power MOSFETs designed to switch large currents quickly and efficiently. It features a low threshold voltage and low RDS(ON) that allows for fast switching with minimal power loss. The device is well suited for use in a wide range of DC and switch-mode power applications including power management, controllers and amplifiers. This device is also an excellent choice for battery powered applications and motion control.

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