SMMBD7000LT1G Allicdata Electronics
Allicdata Part #:

SMMBD7000LT1GOSTR-ND

Manufacturer Part#:

SMMBD7000LT1G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 100V 200MA SOT23
More Detail: Diode Array 1 Pair Series Connection Standard 100V...
DataSheet: SMMBD7000LT1G datasheetSMMBD7000LT1G Datasheet/PDF
Quantity: 3000
3000 +: $ 0.03926
6000 +: $ 0.03413
15000 +: $ 0.02901
30000 +: $ 0.02730
75000 +: $ 0.02560
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 3µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBD7000
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In electronic systems, diode arrays, such as the SMMBD7000LT1G, are usually used as demultiplexers, phase-shift-keying (PSK) demodulators, switch controllers, and high-speed multiline protection applications. This series of diode arrays is composed of two types of diodes―SB501, a fast-recovery rectifier with low reverse leakage, and SD500, a high-speed Schottky/Silicon Avalanche clamp.

A key purpose of the SMMBD7000LT1G is to improve the reliability of electrical power systems and reduce the risk of component failures due to overvoltage and undervoltage transients. This series has a reverse breakdown voltage of 5V and a junction temperature rating of -40 to +125°C. It’s also capable of dissipating up to 7W of power. Typical applications are powering high-speed electrical interfaces and microprocessor circuits. The SMMBD7000LT1G is designed to protect circuits from transient over voltages, EMI/RFI interference, and inductive switching noise.

The array’s working principle is based on the current clamping disruptive voltage (Vclamp) technique. Vclamp is a specific type of voltage-clamping effect that occurs when the voltage applied to the diode array exceeds the array’s breakdown voltage, and current begins to flow through the array. This current flow, typically referred to as clamping current, increases the power dissipation of the array and causes it to stabilize. The diode array can thus be used to protect circuits from overvoltage and underexposure transients.

It’s worth noting that the array’s robust design also protects against ESD (electrostatic discharge) pulses. During ESD pulses, the array’s parasitic capacitance quickly charges up, causing a sudden increase in the array’s input current. The increased current dissipates more power, which helps protect the array from damage.

The SMMBD7000LT1G diode array is one of the most comprehensive and reliable diode arrays available on the market. It provides efficient and reliable protection for circuits, and offers incredibly high-speed clamping and bidirectional transient protection. With its industry-leading features and robust design, it’s perfect for a wide variety of applications, including high-speed and low-speed designs.

The specific data is subject to PDF, and the above content is for reference

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