Allicdata Part #: | SMMBT5551LT3G-ND |
Manufacturer Part#: |
SMMBT5551LT3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 0.6A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 225mW Sur... |
DataSheet: | SMMBT5551LT3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04075 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The SMMBT5551LT3G is a Bipolar Junction Transistor (BJT), designed and produced by Rohm Semiconductor. It is devices specifically designed to amplify currents – allowing the passage of current in one direction, while blocking it in the other. This makes them useful in a variety of applications, from preventing the inrush of current on power-up, to switching signals on and off within logic circuits. By controlling the amount of current that flows through the base of the BJT, the BJT can be used as an amplifier or an analog switch.
The SMMBT5551LT3G is a single BJT, meaning that it consists of three terminals – the Collector, Base and Emitter. When working, the Base terminal allows current to flow from the Collector to the Emitter at different degrees of intensity. When the Base of the SMMBT5551LT3G gets more positive than the Emitter, the BJT conducts current, allowing it to pass through the device. If the Emitter is more positive than the Base, the BJT is non-conductive and no current can pass through the device. Some common uses of this BJT in analog and digital electronics include current regulation and voltage amplification.
The SMMBT5551LT3G is well-suited for application in linear, low-noise analog circuits and in switching circuits as well. It is most commonly used in 3.3V/5V systems for linear amplification, IF and RF amplifiers, audio frequency preamplifiers and switching power supplies. The SMMBT5551LT3G has a wide range of operation and can be used to build simple amplifier circuits or more complex circuitry. Its fast switching speed is ideal for applications such as logic-gate switching, owing to its ability to with stand low to medium frequency interference. Its low power consumption make it a great choice for small to medium sized projects.
The working principles of the SMMBT5551LT3G are relatively simple. When voltage is applied to the base of the BJT, it causes a further voltage drop across the Base-Emitter junction. This voltage drop then controls the current flow between the Collector and Emitter. Varying the Base-Emitter junction voltage, by varying the Base current, can control the current flow between the Collector and Emitter terminals. This means that the BJT can be used as an amplifier, to increase the output voltage, or as an analog switch, to switch a signal between two different levels.
In summary, the SMMBT5551LT3G is a single Bipolar Junction Transistor designed to amplify and switch electrical currents. Its low power consumption and speedy switching time make it a relatively efficient BJT solution for linear, low-noise analog circuits and power supplies. The SMMBT5551LT3G is a great choice for a range of different applications, such as control circuits, amplifiers, analog switches and logic-gate switching.
The specific data is subject to PDF, and the above content is for reference
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