SMMBTA06WT3G Allicdata Electronics
Allicdata Part #:

SMMBTA06WT3G-ND

Manufacturer Part#:

SMMBTA06WT3G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.5A SC70-3
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 150m...
DataSheet: SMMBTA06WT3G datasheetSMMBTA06WT3G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03355
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Description

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A SMMBTA06WT3G transistor is a single bipolar junction transistor (BJT) used mainly in amplifier circuits, both as an input transistor and a power amplifier. A BJT is a three-terminal, two-junction semiconductor device that has the ability to amplify current. It is made up of two P-type semiconductor materials separated by a thin section of N-type material. This structure is well-suited for a variety of applications since its base-emitter and collector-emitter transistors can be used to amplify an input signal or to switch current on and off.

The SMMBTA06WT3G transistor is a particular type of BJT known as an npn-type. This means it has a negative charge along one type of semiconductor material and a positive charge along the other, creating a ‘sandwich’ structure. This structure is well-suited to amplifying an input signal since it is able to quickly change the current flow between its two collector regions when the input signal changes. This allows for precise and fast control of current.

The SMMBTA06WT3G transistor is typically used in amplifier circuits, both as an input transistor and a power amplifier. It is often used in digital circuits due to its ability to quickly switch current between its two collector regions. When used as an input transistor, the transistor can amplify a small input signal to be used by the remaining components in an amplifier circuit. When used as a power amplifier, the transistor can be used to amplify the output of an amplifier circuit before passing it on to the rest of the circuit.

The SMMBTA06WT3G transistor works by changing the voltage drop across its terminals in response to an input signal. The base-emitter voltage (VBE) changes in response to the input signal and this in turn changes the current flow between the collector and emitter. This allows the transistor to amplify the input signal by increasing or decreasing the current flow through its collector regions. The voltage drop across the collector-emitter region (VCE) is also controlled by the amount of current flowing through the base-emitter region. The output of the transistor will therefore be a stronger version of the input signal, allowing it to amplify the signal.

The SMMBTA06WT3G is a commonly used transistor in both analog and digital circuits, and many manufacturers supply them for a relatively low cost. They are well-suited to many different applications, from amplifying small input signals to switching current on and off. They offer a number of advantages over other types of transistors, including their low power consumption, fast switching speed and low noise levels. The SMMBTA06WT3G is a popular choice for those looking for a reliable and cost-effective way to amplify or switch current in their projects.

The specific data is subject to PDF, and the above content is for reference

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