SMMBF4391LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	30V
Drain to Source Voltage (Vdss):	30V
Current - Drain (Idss) @ Vds (Vgs=0):	50mA @ 15V
Voltage - Cutoff (VGS off) @ Id:	4V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds:	14pF @ 15V (VGS)
Resistance - RDS(On):	30 Ohms
Power - Max:	225mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MBF4391

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Introduction to SMMBF4391LT1G

SMMBF4391LT1G is a type of transistor called a junction field-effect transistor (JFET). It is a type of three-terminal electronic device that can be used to amplify electrical signals. Generally, JFETs are used in low-frequency circuitry, such as audio and video circuits, where their low noise characteristics are an advantage.

Application Field of SMMBF4391LT1G

SMMBF4391LT1G is typically used in applications that require low noise, high gain, and low input bias current, such as power amplifiers, analog switches, motor drivers, and switching circuits. In addition, JFETs are found in a wide variety of analog circuits, such as current mirrors, voltage amplifiers, oscillators, transimpedance amplifiers, and voltage-controlled resistors. The SMMBF4391LT1G has a wide range of gain-bandwidth capabilities, making it well suited for a variety of high performance applications.

Working Principle of SMMBF4391LT1G

The SMMBF4391LT1G is a junction field-effect transistor (JFET). It is an n-channel device, meaning it is made of an intrinsic semiconductor with a negative charge. A JFET works by utilizing the electric field created by the gate, which controls the current between the source and drain pins. The gate voltage controls the conductivity of the channel between the source and drain pins. When a positive voltage is applied to the gate, it attracts the electron carriers in the channel and the junction becomes less conductive. When a negative voltage is applied, the carriers repel and the junction becomes more conductive.In the SMMBF4391LT1G, the gate voltage is what controls the current between the source and drain pins, making it possible to adjust the current using the gate voltage. The gate voltage range is typically between -2 V and +6 V. The maximum drain current of the SMMBF4391LT1G is typically around 10 mA, and the maximum power dissipation is approximately 500 mW.

Conclusion

The SMMBF4391LT1G is a popular choice for applications requiring low noise, high gain, and low input bias current. It is widely used in power amplifiers, analog switches, motor drivers, and switching circuits. Its high gain-bandwidth capabilities make it suitable for a variety of high performance applications. The SMMBF4391LT1G is an n-channel JFET that works by utilizing the electric field created by the gate to control the current between the source and drain pins. The gate voltage range is typically between -2 V and +6 V and the maximum drain current is around 10 mA.

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