SMUN5114DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN51**DW1T
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5114DW1T1G is a metal-oxide-semiconductor field-effect transistor (MOSFET) array specially designed for automotive applications. It is part of the bipolar junction transistor (BJT) array pre-biased device family. The device is usually mounted in a surface mount technology (SMT) package and is suitable for use in inverter circuits, motor drive systems, and power supply applications. This application note describes the main features and functional characteristics of the SMUN5114DW1T1G.The SMUN5114DW1T1G is a pre-biased device, which means it is built with a pre-programmed potential difference between the drain and source. The device contains four N-Channel MOSFETs, each with their own pre-biased conditions. This allows the device to operate in situations where the load current is variable or a wide range of operating conditions is required.The pre-biased conditions of the SMUN5114DW1T1G enable the device to be used in a range of different applications. The versatile device is often used in automotive applications, notably for variable-speed motors and lighting control. The device can also be used for general switching and interface circuits.The SMUN5114DW1T1G is capable of high-speed switching, with a maximum switching frequency of up to 4MHz. This makes the device suitable for use in power electronics applications. In addition, the device is able to withstand high-voltage surges and is also capable of providing over-voltage protection. The device also features internal thermal protection, allowing it to operate even at higher temperatures.The SMUN5114DW1T1G operates by measuring the difference between the potential of its source and the potential of its drain. When the source has a higher potential than the drain, electrons flow from the drain side to the source side, resulting in increased current flow through the device. This current flow can be controlled by adjusting the gate voltage, allowing the device to be used for analog or digital circuits.The SMUN5114DW1T1G is used in many different types of systems, such as motor control and protection, automotive lighting control systems, automotive audio systems, and much more. All in all, the device is a versatile component with a wide range of applications. Its pre-biased features allow it to operate in a range of conditions, making it a must-have component for any circuit design.

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