SMUN5315DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5315DW1T1G is a type of pre-biased bipolar transistors array which is highly recommended for manufacturing and industrial uses. It is an integrated circuit which ensures optimal functioning, minimum losses and improved reliabilities. In addition, it is suitable for various applications due to its low voltage operation range and minimum power consumption.SMUN5315DW1T1G consists of two pre-biased NPN transistors, which are connected in series like in a Darlington configuration. This configuration ensures that the two transistors receive more than doubled current, resulting in increased power output. In addition, the maximum collector base voltage is enforced in a multi-supply systems, ensuring high voltage level threshold and improved insulation.The main application of SMUN5315DW1T1G is in power amplification and controlling circuits, where high voltage operations are necessary. Its pre-biased structure allows for improved performance and minimum power consumption when compared to other similar arrays. It can be used for instrumentation and industrial environments, where it can efficiently handle high input and output levels. The working principle of SMUN5315DW1T1G is based on the transistor action wherein current can be controlled from one circuit to another. It is configured with two NPN (Negative-Positive-Negative) transistors in a Darlington configuration, which doubles the current flow for improved signal and power output. The pre-biased array allows the output current of one transistor to be used as the input current of the other transistor. Moreover, the emitters are connected to ground while the bases are connected together to form a common signal. The improved insulation of SMUN5315DW1T1G is the main drawback, as it results in increased cross-talk and decreased signal integrity. As an application, it is important to choose the right components to ensure that the common-mode voltage is well balanced in multiple supply systems. Other than this, the low supply voltage (down to 4V) enables the array to be used in low voltage systems, where it can efficiently cope up with the ever-changing power requirements. In conclusion, SMUN5315DW1T1G is a very useful pre-biased bipolar transistor array which provides improved power and signal output in various demanding applications. Its pre-biased structure and low voltage operations make it highly suitable for power amplification, controlling circuits and instrumentation applications. However, its insulation capabilities is quite low which results in increased cross-talk and decreased signal integrity.

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