SMUN5335DW1T2G

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The SMUN5335DW1T2G is an advanced bipolar junction transistor (BJT) array, pre-biased and designed with a photolithographic process utilizing thin-film resistor networks. It is intended for use in commercial, industrial and automotive applications. This NPN transistor array is designed to provide logic level switching in low voltage applications such as Bluetooth, W-LAN, and USB/I2C devices.

The SMUN5335DW1T2G features a 2N3904 NPN transistor and an optional LED indicator for visual diagnostics. The LED indicator is disabled when the device is not in operation, allowing it to operate even in power-limited applications. The device also includes a 0.5A MOSFET for driving the LED. It is capable of driving an LED with up to 5A of current, making it ideal for use in higher power, low voltage applications.

The SMUN5335DW1T2G is designed with a monolithic silicon substrate utilizing a thin-film resistor network to maintain very low on-state resistance values over a wide range of temperatures. This enables it to maintain high performance levels with low power consumption and minimal dissipation.

The SMUN5335DW1T2G has an operating temperature range of -40°C to 115°C, making it suitable for industrial and automotive applications. It is designed to withstand high voltage transients and has integrated ESD protection to provide reliable operation. The device also includes a built-in thermal shutdown feature that prevents destructive overheating.

The SMUN5335DW1T2G is ideal for low power, low voltage switching applications. It is suitable for use in devices such as home and business automation systems, robotics, medical instruments, automotive systems and devices, industrial equipment and many more. It is also used in high current applications such as LED lighting, motor speed control and power supplies. The device can be used in both low power and high current applications, making it a versatile choice for a variety of applications.

In conclusion, the SMUN5335DW1T2G is a versatile pre-biased NPN bipolar junction transistor array designed to provide reliable low power switching in a wide range of applications. It is suitable for use in commercial, industrial and automotive applications and can be used in both high current and low power applications. The built-in ESD protection and thermal shutdown features provide reliable protection against power transients and excessive heat, while the integrated LED indicator provides visual diagnostics.

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