Allicdata Part #: | SMUN5215T1G-ND |
Manufacturer Part#: |
SMUN5215T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | SMUN5215T1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
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.The SMUN5215T1G is a single, pre-biased, bipolar junction transistor (BJT) which has a wide range of applications in various electronic devices and equipment. The transistor is designed specifically to operate in the high-voltage, high-current industrial environment, and is also suitable for driving loads. This transistor has a maximum collector-emitter voltage rating of 45V and a maximum collector current of 1A.
The SMUN5215T1G transistor has a “built-in” base-emitter bias voltage which eliminates the need for external bias in some circuit designs. This pre-biased design also reduces overall design complexity, potential device mismatch and thermal variability.
The transistor has an insulated base terminal which is a key feature. This permits assembly of the device onto high-temperature substrates. It also helps to protect the transistor from higher temperature environments without having to resort to expensive external insulation.
The SMUN5215T1G has been designed specifically to operate in environments with high reverse voltage and high power consumption. This makes it ideal for many applications such as power switching, motor speed control, motor stepping and switching, and protection of electronic circuitry and components from excessive surges.
In terms of operation, the SMUN5215T1G uses a traditional bipolar conduction mechanism. It works by allowing current to flow from the collector to the emitter when the base voltage exceeds the base-emitter voltage. When the voltage at the base is lower than the base-emitter voltage, then the device becomes non-conductive. As a result, this type of device can be used to perform switching and protection functions in electronics.
The device is also capable of pulse and continuous operation. In continuous operation, the device provides a strictly linear current transfer characteristic. This allows for precise control over the amount of current flowing through the transistor. In pulse operation, the device can be used to provide very fast switching speeds and provide a high degree of current control by changing the base current.
The SMUN5215T1G is a reliable, cost-effective and easy to use device and is suitable for a wide range of electronic applications. Its insulated base terminal and pre-biased design make it particularly suitable for use in harsh environments. This, combined with its ability to perform both continuous and pulse operation, makes it a popular choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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