Allicdata Part #: | SMUN5232T1G-ND |
Manufacturer Part#: |
SMUN5232T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 230MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | SMUN5232T1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03744 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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The SMUN5232T1G transistor is part of the single, pre-biased bipolar junction transistor (BJT) family. It features useful characteristics that make it suitable for use in a variety of applications, such as power switching, power amplifiers and audio frequency amplifiers.
The SMUN5232T1G is a NPN (Negative Polarity Nucleus) transistor with low saturation voltage, offering low noise, high transconductance and small package size. It also has a high voltage (Vce > 100V) and a high power rating (Ic > 10mW).
The device has a low output impedance and is suitable for use in low-impedance applications. It also has a high gain bandwidth and offers improved phase performance in high frequency circuits. Furthermore, the SMUN5232T1G has a common emitter configuration, which minimizes the need for output current limiting components.
To understand how the SMUN5232T1G works, it is important to understand the operation of a bipolar transistor. A bipolar transistor consists of three terminals, the emitter, base and collector. The base of the transistor is the controlling element and is used to control the current flow through the device. By the application of an input signal to the base, an electric field is set up between the emitter and collector. This electric field controls the current from the emitter to the collector. The more accurately this electric field is controlled, the better the performance of the transistor.
In the case of the SMUN5232T1G, a bias voltage is applied to the collector to determine the current flow between the emitter and collector. When a signal is applied to the base, the current between the emitter and collector is modulated, depending on the signal strength. This allows for amplification of a signal as it passes through the transistor.
The SMUN5232T1G can be used in a variety of applications. It is commonly used as an audio frequency amplifier, power amplifier and switching applications. In audio frequency applications, the transistor can be used to amplify the signal from a microphone. Power amplifiers can be used to increase the power of an output signal, while switching applications can be used to control the flow of power in a circuit. In addition, the transistor can be used for protection purposes in a circuit, to prevent the flow of current in the event of a short circuit.
The SMUN5232T1G is an attractive choice for a variety of applications due to its low noise, high voltage and high power capability. It is a reliable device, providing excellent performance in both audio frequency and power applications. The small package size imposes minimal space constraints, making the device suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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