Allicdata Part #: | SPI100N03S2-03-ND |
Manufacturer Part#: |
SPI100N03S2-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A I2PAK |
More Detail: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | SPI100N03S2-03 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7020pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The SPI100N03S2-03 is a powerful transistor from a range of 900W transistors. It is a low voltage, low on-state resistance, N-Channel MOSFET, with a rugged design and high switching speeds. This particular design enables it to be used in many applications, including those in automotive, industrial, and consumer sectors. This article will discuss the application fields and working principle of the SPI100N03S2-03 transistor.
Application Fields
The SPI100N03S2-03 transistors are mainly used in the automotive sector. This is due to the fact that they are designed to have low on-state resistance and high switching speeds. They are also designed to have reliable performance in harsh environments and to keep their output at a constant level. The SPI100N03S2-03 is also suitable for use in motor controls, switching regulators, power converters and lighting control systems, such as LED lighting.
The SPI100N03S2-03 transistor is also used in many industrial applications, such as in power tools, welding equipment, and in heavy-duty machinery. The transistor’s low on-state resistance and high switching speeds enable it to have reliable performance and to provide a steady output. The fact that they are designed to be energy-efficient also makes them suitable for industrial applications that require high power.
The SPI100N03S2-03 transistor is also suitable for use in consumer products. This is due to its wide range of available voltage ratings and its low on-state resistance. This makes it suitable for use in products such as laptop and mobile phone chargers and other AC/DC power adapters. It can also be used in audio and video equipment, as well as in any other product that requires an efficient and reliable power supply.
Working Principle
The working principle of the SPI100N03S2-03 transistor is quite simple. The transistor consists of three terminals: the source, gate, and drain. A positive voltage is applied to the gate, which creates an electric field that opens the MOSFET. This allows current to flow through the source to the drain. The amount of current that can flow through the transistor is determined by the size of the gate voltage.
When the drain voltage is greater than the source voltage, the device is said to be in a “forward” state. In this state, electricity can pass through the transistor. When the drain voltage is lower than the source voltage, the device is said to be in a “reverse” state. In this state, no electricity can pass through the transistor.
In summary, the SPI100N03S2-03 is a powerful transistor from a range of 900W transistors. It has a low voltage, low on-state resistance, and is capable of high switching speeds. It is suitable for use in automotive, industrial, and consumer applications, as well as for motor controls, switching regulators, power converters and lighting control systems. Its working principle is based on the application of a positive gate voltage that creates an electric field that opens the MOSFET.
The specific data is subject to PDF, and the above content is for reference
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